Ming Hsieh Department of Electrical Engineering, University of Southern California , Los Angeles, California 90089, United States.
ACS Nano. 2018 Feb 27;12(2):1656-1663. doi: 10.1021/acsnano.7b08272. Epub 2018 Jan 17.
Neuromorphic or "brain-like" computation is a leading candidate for efficient, fault-tolerant processing of large-scale data as well as real-time sensing and transduction of complex multivariate systems and networks such as self-driving vehicles or Internet of Things applications. In biology, the synapse serves as an active memory unit in the neural system and is the component responsible for learning and memory. Electronically emulating this element via a compact, scalable technology which can be integrated in a three-dimensional (3-D) architecture is critical for future implementations of neuromorphic processors. However, present day 3-D transistor implementations of synapses are typically based on low-mobility semiconductor channels or technologies that are not scalable. Here, we demonstrate a crystalline indium phosphide (InP)-based artificial synapse for spiking neural networks that exhibits elasticity, short-term plasticity, long-term plasticity, metaplasticity, and spike timing-dependent plasticity, emulating the critical behaviors exhibited by biological synapses. Critically, we show that this crystalline InP device can be directly integrated via back-end processing on a Si wafer using a SiO buffer without the need for a crystalline seed, enabling neuromorphic devices that can be implemented in a scalable and 3-D architecture. Specifically, the device is a crystalline InP channel field-effect transistor that interacts with neuron spikes by modification of the population of filled traps in the MOS structure itself. Unlike other transistor-based implementations, we show that it is possible to mimic these biological functions without the use of external factors (e.g., surface adsorption of gas molecules) and without the need for the high electric fields necessary for traditional flash-based implementations. Finally, when exposed to neuronal spikes with a waveform similar to that observed in the brain, these devices exhibit the ability to learn without the need for any external potentiating/depressing circuits, mimicking the biological process of Hebbian learning.
神经形态或“类脑”计算是高效、容错处理大规模数据以及实时感测和转换复杂多元系统和网络(如自动驾驶车辆或物联网应用)的主要候选方案。在生物学中,突触作为神经系统中的一个活动存储单元,是负责学习和记忆的组件。通过一种紧凑、可扩展的技术,以电子方式模拟这个元件,并且可以集成在三维 (3-D) 架构中,这对于未来的神经形态处理器实现至关重要。然而,目前突触的 3-D 晶体管实现通常基于低迁移率半导体沟道或不可扩展的技术。在这里,我们展示了一种基于磷化铟 (InP) 的用于尖峰神经网络的人工突触,它具有弹性、短期可塑性、长期可塑性、超可塑性和尖峰时间依赖性可塑性,模拟了生物突触表现出的关键行为。至关重要的是,我们表明,这种结晶 InP 器件可以通过在 Si 晶圆上使用 SiO 缓冲层进行后端处理直接集成,而无需晶种,从而实现可在可扩展和 3-D 架构中实现的神经形态器件。具体来说,该器件是一种结晶 InP 沟道场效应晶体管,通过改变 MOS 结构本身中填充陷阱的群体与神经元尖峰相互作用。与其他基于晶体管的实现不同,我们表明,无需使用外部因素(例如,气体分子的表面吸附)并且无需传统基于闪存的实现所需的高电场,就可以模拟这些生物功能。最后,当暴露于类似于大脑中观察到的神经元尖峰的波形时,这些器件无需任何外部增强/抑制电路即可学习,模拟了赫布学习的生物过程。