Department of Engineering Product Design, Singapore University of Technology and Design, 8 Somapah Road, 487372 Singapore.
Department of Science, Mathematics and Technology, Singapore University of Technology and Design, 8 Somapah Road, 487372 Singapore.
ACS Appl Mater Interfaces. 2021 Dec 22;13(50):60209-60215. doi: 10.1021/acsami.1c19062. Epub 2021 Dec 8.
The transformation from silent to functional synapses is accompanied by the evolutionary process of human brain development and is essential to hardware implementation of the evolutionary artificial neural network but remains a challenge for mimicking silent to functional synapse activation. Here, we developed a simple approach to successfully realize activation of silent to functional synapses by controlled sulfurization of chemical vapor deposition-grown indium selenide crystals. The underlying mechanism is attributed to the migration of sulfur anions introduced by sulfurization. One of our most important findings is that the functional synaptic behaviors can be modulated by the degree of sulfurization and temperature. In addition, the essential synaptic behaviors including potentiation/depression, paired-pulse facilitation, and spike-rate-dependent plasticity are successfully implemented in the partially sulfurized functional synaptic device. The developed simple approach of introducing sulfur anions in layered selenide opens an effective new avenue to realize activation of silent synapses for application in evolutionary artificial neural networks.
从沉默突触到功能突触的转变伴随着人类大脑发育的进化过程,这对于进化人工神经网络的硬件实现至关重要,但仍然是模拟沉默突触到功能突触激活的挑战。在这里,我们开发了一种简单的方法,通过控制化学气相沉积生长的硒化铟晶体的硫化,成功地实现了沉默突触到功能突触的激活。其潜在的机制归因于硫化引入的硫阴离子的迁移。我们最重要的发现之一是,功能突触行为可以通过硫化程度和温度来调节。此外,在部分硫化的功能突触器件中成功实现了包括增强/抑制、成对脉冲易化和脉冲速率依赖性可塑性在内的基本突触行为。在层状硒化物中引入硫阴离子的这种简单方法为实现沉默突触的激活开辟了一条有效的新途径,可应用于进化人工神经网络。