School of Chemistry, Beihang University, No. 37 Xueyuan Road, Haidian District, Beijing, 100191, China.
CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, China.
Macromol Rapid Commun. 2018 Jul;39(14):e1700726. doi: 10.1002/marc.201700726. Epub 2018 Jan 15.
Attaining control on charge injection properties is significant for meaningful applications of organic field-effect transistors (OFETs). Here, molecular electron-doping is applied with an air-stable dimer dopant for n-type OFETs based on (naphthalene diimide-diketopyrrolopyrrole) polymer hosts. Through investigating the doping effect on contact and transport properties, it is found that the electron transport increases in n-doped OFETs at low doping regime with remaining large on/off ratios. These favorable meliorations are reconciled by the mitigated impacts of contact resistance and interfacial traps, as well as the surface morphology exhibiting features of increased ordering. The occurrence of doping in the presence of dimer dopants is evidenced by the observed shift of Fermi level toward vacuum level coupled with compositional analysis. Without applying vacuum-deposition-based contact doping, charge injection efficiencies are gained without losing OFET characteristics using the solution-based methodology.
实现对电荷注入特性的控制对于有机场效应晶体管（OFET）的有意义应用非常重要。在这里，采用空气稳定的二聚体掺杂剂对基于（萘二酰亚胺-二酮吡咯并吡咯）聚合物主体的 n 型 OFET 进行分子电子掺杂。通过研究掺杂对接触和传输特性的影响，发现在低掺杂区域，n 掺杂 OFET 的电子传输增加，同时保持较大的开/关比。这些有利的改善可以通过接触电阻和界面陷阱的影响减轻以及表面形貌显示出增加有序性的特征来解释。二聚体掺杂剂存在时掺杂的发生可以通过观察到费米能级向真空能级的偏移以及组成分析来证明。在不使用真空沉积基接触掺杂的情况下，使用基于溶液的方法可以获得电荷注入效率，而不会失去 OFET 的特性。
