Zhu Jiang, Yan Xuelian, Cheng Jiang
Co-Innovation Center for Micro/Nano Optoelectronic Materials and Devices, College of Materials and Chemical Engineering, Chongqing University of Arts and Sciences, No. 319, Honghe Road, Yongchuan District, Chongqing, 402160, People's Republic of China.
State Key Laboratory of Advanced Chemical Power Sources, No. 705, Zhonghuabei Road, Honghuagang District, Zunyi, 563003, Guizhou Province, People's Republic of China.
Nanoscale Res Lett. 2018 Jan 15;13(1):19. doi: 10.1186/s11671-017-2421-1.
Antimony sulfide (SbS) has been applied in photoelectric devices for a long time. However, there was lack of information about SbS quantum dots (QDs) because of the synthesis difficulties. To fill this vacancy, water-soluble SbS QDs were prepared by hot injection using hexadecyltrimethylammonium bromide (CTAB) and sodium dodecyl sulfate (SDS) mixture as anionic-cationic surfactant, alkanol amide (DEA) as stabilizer, and ethylenediaminetetraacetic acid (EDTA) as dispersant. Photoelectric properties including absorbing and emission were characterized by UV-Vis-IR spectrophotometer and photoluminescence (PL) spectroscopic technique. An intensive PL emission at 880 nm was found, indicating SbS QDs have good prospects in near-infrared LED and near-infrared laser application. SbS QD thin films were prepared by self-assembly growth and then annealed in argon or selenium vapor. Their band gaps (E s) were calculated according to transmittance spectra. The E of SbS QD thin film has been found to be tunable from 1.82 to 1.09 eV via annealing or selenylation, demonstrating the good prospects in photovoltaic application.
硫化锑（SbS）长期以来一直应用于光电器件中。然而，由于合成困难，关于硫化锑量子点（QDs）的信息匮乏。为了填补这一空白，通过热注射法制备了水溶性硫化锑量子点，使用十六烷基三甲基溴化铵（CTAB）和十二烷基硫酸钠（SDS）混合物作为阴阳离子表面活性剂，链烷醇酰胺（DEA）作为稳定剂，乙二胺四乙酸（EDTA）作为分散剂。通过紫外-可见-红外分光光度计和光致发光（PL）光谱技术对包括吸收和发射在内的光电性能进行了表征。发现其在880nm处有强烈的PL发射，表明硫化锑量子点在近红外发光二极管和近红外激光应用方面具有良好的前景。通过自组装生长制备了硫化锑量子点薄膜，然后在氩气或硒蒸气中进行退火。根据透射光谱计算了它们的带隙（E s）。已发现通过退火或硒化，硫化锑量子点薄膜的E 可在1.82至1.09eV范围内调节，这表明其在光伏应用方面具有良好的前景。
