Zeng Yiyu, Sun Kaiwen, Huang Jialiang, Nielsen Michael P, Ji Fan, Sha Chuhan, Yuan Shengjie, Zhang Xueyun, Yan Chang, Liu Xu, Deng Hui, Lai Yanqing, Seidel Jan, Ekins-Daukes Ned, Liu Fangyang, Song Haisheng, Green Martin, Hao Xiaojing
School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, NSW 2052, Australia.
School of Material Science, University of New South Wales, Sydney, NSW 2052, Australia.
ACS Appl Mater Interfaces. 2020 May 20;12(20):22825-22834. doi: 10.1021/acsami.0c02697. Epub 2020 May 6.
The one-dimensional photovoltaic absorber material SbS requires crystal orientation engineering to enable efficient carrier transport. In this work, we adopted the vapor transport deposition (VTD) method to fabricate vertically aligned SbS on a CdS buffer layer. Our work shows that such a preferential vertical orientation arises from the sulfur deficit of the CdS surface, which creates a beneficial bonding environment between exposed Cd dangling bonds and S atoms in the SbS molecules. The CdS/VTD-SbS interface recombination is suppressed by such properly aligned ribbons at the interface. Compared to typical [120]-oriented SbS films deposited on CdS by the rapid thermal evaporation (RTE) method, the VTD-SbS thin film is highly [211]- and [121]-oriented and the performance of the solar cell is increased considerably. Without using any hole transportation layer, a conversion efficiency of 4.73% is achieved with device structure of indium tin oxide (ITO)/CdS/SbS/Au. This work provides a potential way to obtain vertically aligned thin films on different buffer layers.
一维光伏吸收材料硫化锑（SbS）需要进行晶体取向工程以实现高效的载流子传输。在这项工作中，我们采用气相传输沉积（VTD）方法在硫化镉（CdS）缓冲层上制备垂直取向的SbS。我们的工作表明，这种优先的垂直取向源于CdS表面的硫缺陷，这在暴露的镉悬空键与SbS分子中的S原子之间创造了有利的键合环境。界面处这种排列适当的带状结构抑制了CdS/VTD-SbS界面复合。与通过快速热蒸发（RTE）方法沉积在CdS上的典型[120]取向的SbS薄膜相比，VTD-SbS薄膜高度取向于[211]和[121]，并且太阳能电池的性能显著提高。在不使用任何空穴传输层的情况下，采用氧化铟锡（ITO）/CdS/SbS/Au器件结构实现了4.73%的转换效率。这项工作提供了一种在不同缓冲层上获得垂直取向薄膜的潜在方法。
