State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences & College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100083, China.
Nanoscale. 2017 Aug 31;9(34):12364-12371. doi: 10.1039/c7nr03574h.
Photodetectors which can work at both low and high temperatures are very important for the development of practical optoelectronic devices. Many studies have shown that low-dimensional semiconductors have more advantages in optoelectronic applications than their bulk forms. Here, we report the preparation of high-quality SbS nanowires (NWs) by a sulphur-assisted vapour transport method. The corresponding individual SbS NW based photodetectors exhibit good photoresponse in a wide spectral range from about 300 to 800 nm. The optimal photoresponse values are measured under the illumination of a 638 nm laser at room temperature: a high current ON/OFF ratio of about 210, a spectral responsivity of 1152 A W, a detectivity of 2 × 10 Jones, and rise and fall times of about 37 ms, respectively. More importantly, the temperature dependence of the electrical conductivity of SbS shows three variation regions which can be attributed to the interaction between the carrier mobility and carrier concentration. The temperature dependence of the photoresponse of the photodetectors shows that they have good adaptability to temperature, and they worked very well at a wide temperature range from 8 to 420 K. Our results indicate that low-dimensional SbS crystals are promising candidates for new multifunctional optoelectronic devices.
对发展实用型光电设备而言，能够在高低温环境下工作的光电探测器非常重要。许多研究表明，与体材料相比，低维半导体在光电应用方面具有更多优势。在此，我们通过硫辅助气相输运法制备出高质量的 SbS 纳米线（NWs）。基于单个 SbS NW 的相应光电探测器在约 300 至 800nm 的宽光谱范围内表现出良好的光电响应。在室温下，用 638nm 激光照射时，测得最佳光电响应值：电流比约为 210，光谱响应率为 1152A W，探测率为 2×10 Jones，上升和下降时间约为 37ms。更重要的是，SbS 电导率的温度依赖性显示出三个变化区域，这归因于载流子迁移率和载流子浓度之间的相互作用。光电探测器的光电响应的温度依赖性表明，它们对温度具有良好的适应性，在 8 至 420K 的宽温度范围内工作良好。我们的研究结果表明，低维 SbS 晶体是新型多功能光电设备的理想候选材料。
