State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC) , Chengdu 610054, P. R. China.
Department of Chemical and Environmental Engineering, Yale University , New Haven, Connecticut 06511, United States.
ACS Appl Mater Interfaces. 2018 Jan 31;10(4):3856-3864. doi: 10.1021/acsami.7b15730. Epub 2018 Jan 17.
Sequentially solution-processed polymer photodetectors (SSP PPDs) based on poly(3-hexylthiophene-2,5-diyl) (P3HT)/[6,6]-phenyl C-butyric acid methyl ester (PCBM) are fabricated by depositing the top layers of PCBM from an appropriate cosolvent of 2-chlorophenol (2-CP)/o-dichlorobenzene (ODCB) onto the predeposited bottom layers of P3HT. By adjusting the ratio of 2-CP/ODCB in the top PCBM layers, the resulting SSP PPD shows a decreased dark current and an increased photocurrent, leading to a maximum detectivity of 1.23 × 10 Jones at a wavelength of 550 nm. This value is 5.3-fold higher than that of the conventional bulk heterojunction PPD. Morphology studies reveal that the PCBM partially penetrates the predeposited P3HT layer during the spin-coating process, resulting in an optimal three-phase morphology with one well-mixed interdiffusion P3HT/PCBM phase in the middle of the bulk and two pure phases of P3HT and PCBM at the two electrode sides. We show that the pure phases form high Schottky barriers (>2.0 eV) at the active layer/electrodes interface and efficiently block unfavorable reverse charge carrier injection by significantly decreasing the dark current. The interdiffussion phase enlarges the donor-acceptor interfacial area leading to a large photocurrent. We also reveal that the improved performance of SSP PPDs is also due to the enhanced optical absorption, improved P3HT crystallinity, increased charge carrier mobilities, and suppressed bimolecular recombination.
基于聚(3-己基噻吩-2,5-二基)(P3HT)/[6,6]-苯基 C-丁酸甲酯(PCBM)的顺序溶液处理聚合物光电探测器(SSP PPD)是通过将合适的溶剂 2-氯苯酚(2-CP)/邻二氯苯(ODCB)的 PCBM 顶层沉积到预先沉积的 P3HT 底层上来制备的。通过调整顶层 PCBM 层中 2-CP/ODCB 的比例,所得 SSP PPD 显示出暗电流减小和光电流增加,导致在 550nm 波长下最大探测率为 1.23×10^10 Jones。这个值比传统的体异质结 PPD 高 5.3 倍。形貌研究表明,PCBM 在旋涂过程中部分渗透到预先沉积的 P3HT 层中,导致在体相中间有一个很好地混合互扩散的 P3HT/PCBM 相和两个纯 P3HT 和 PCBM 相在两个电极侧的最佳三相形貌。我们表明,纯相在活性层/电极界面形成高肖特基势垒(>2.0eV),通过显著降低暗电流,有效地阻止不利的反向载流子注入。互扩散相增大了施主-受主界面面积,导致大的光电流。我们还揭示了 SSP PPDs 的性能得到改善也是由于增强了光学吸收、提高了 P3HT 结晶度、增加了载流子迁移率和抑制了双分子复合。