School of Microelectronics, Shandong University, Jinan, 250100, China.
National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang, 050051, China.
Sci Rep. 2018 Jan 17;8(1):983. doi: 10.1038/s41598-018-19510-y.
The single-tone power of the AlGaN/GaN heterostructure field-effect transistors (HFETs) with different gate widths was measured. A distinct improvement in device linearity was observed in the sample with a larger gate width. The analysis of the variation of the parasitic source access resistance showed that, as the gate bias is increased, the polarization Coulomb field scattering can offset the increased polar optical phonon scattering and improve the device linearity. This approach is shown to be effective in improving the device linearity of AlGaN/GaN HFETs.
不同栅宽的 AlGaN/GaN 异质结构场效应晶体管（HFET）的单音功率进行了测量。在栅宽较大的样品中观察到器件线性度的明显改善。对寄生源极接入电阻变化的分析表明，随着栅偏压的增加，极化库仑场散射可以抵消增加的极性光学声子散射，从而提高器件线性度。这种方法被证明可以有效地提高 AlGaN/GaN HFET 的器件线性度。
