低寄生光灵敏度和低暗电流2.8μm全局快门像素的开发。

Yokoyama Toshifumi, Tsutsui Masafumi, Suzuki Masakatsu, Nishi Yoshiaki, Mizuno Ikuo, Lahav Assaf

TowerJazz Panasonic Semiconductor Co., Ltd., 800 Higashiyama, Uozu City, Toyama 937-8585, Japan.

Tower Semiconductors, Migdal Haemeq 23105, Israel.

Sensors (Basel). 2018 Jan 25;18(2):349. doi: 10.3390/s18020349.

: We developed a low parasitic light sensitivity (PLS) and low dark current 2.8 μm global shutter pixel. We propose a new inner lens design concept to realize both low PLS and high quantum efficiency (QE). 1/PLS is 7700 and QE is 62% at a wavelength of 530 nm. We also propose a new storage-gate based memory node for low dark current. P-type implants and negative gate biasing are introduced to suppress dark current at the surface of the memory node. This memory node structure shows the world smallest dark current of 9.5 e/s at 60 °C.

我们开发了一种具有低寄生光灵敏度（PLS）和低暗电流的2.8μm全局快门像素。我们提出了一种新的内透镜设计概念，以实现低PLS和高量子效率（QE）。在波长为530nm时，1/PLS为7700，QE为62%。我们还提出了一种基于存储栅极的新型存储节点，以实现低暗电流。引入P型注入和负栅极偏置以抑制存储节点表面的暗电流。这种存储节点结构在60°C时显示出世界上最小的暗电流，为9.5 e/s。