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由具有相反各向异性磁电阻符号的 GaMnAs 层组成的三层结构中的磁化反转。

Magnetization reversal in trilayer structures consisting of GaMnAs layers with opposite signs of anisotropic magnetoresistance.

机构信息

Physics Department, Korea University, Seoul, 136-701, Korea.

Physics Department, University of Notre Dame, Notre Dame, IN, 46556, USA.

出版信息

Sci Rep. 2018 Feb 2;8(1):2288. doi: 10.1038/s41598-018-20749-8.

DOI:10.1038/s41598-018-20749-8
PMID:29396557
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5797254/
Abstract

Magnetization reversal in a GaMnAs trilayer system consisting of two GaMnAs layers separated by a Be-doped GaAs spacer was investigated by magnetotransport measurements. The rotation of magnetization in the two GaMnAs layers is observed as two abrupt independent transitions in planar Hall resistance (PHR). Interestingly, one GaMnAs layer manifests a positive change in PHR, while the other layer shows a negative change for the same rotation of magnetization. Such opposite behavior of the two layers indicates that anisotropic magnetoresistance (AMR) has opposite signs in the two GaMnAs layers. Owing to this opposite behavior of AMR, we are able to identify the sequence of magnetic alignments in the two GaMnAs layers during magnetization reversal. The PHR signal can then be decomposed into two independent contributions, which reveal that the magnetic anisotropy of the GaMnAs layer with negative AMR is predominantly cubic, while it is predominantly uniaxial in the layer with positive AMR. This investigation suggests the ability of engineering the sign of AMR in GaMnAs multilayers, thus making it possible to obtain structures with multi-valued PHR, that can be used as multinary magnetic memory devices.

摘要

通过磁输运测量研究了由两个 GaMnAs 层夹在掺 Be 的 GaAs 间隔层之间组成的 GaMnAs 三层系统中的磁化反转。在平面霍尔电阻（PHR）中观察到两个 GaMnAs 层中磁化的旋转，表现为两个突然的独立转变。有趣的是，一个 GaMnAs 层表现出 PHR 的正变化，而另一个层则表现出相同磁化旋转的负变化。两个层的这种相反行为表明各向异性磁电阻（AMR）在两个 GaMnAs 层中具有相反的符号。由于 AMR 的这种相反行为，我们能够在磁化反转过程中识别两个 GaMnAs 层中磁排列的顺序。然后，PHR 信号可以分解为两个独立的贡献，这表明具有负 AMR 的 GaMnAs 层的磁各向异性主要是立方的，而在具有正 AMR 的层中则主要是单轴的。这项研究表明，有可能在 GaMnAs 多层结构中设计 AMR 的符号，从而获得具有多值 PHR 的结构，可用于作为二进制磁存储设备。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3ea3/5797254/11e18d993b44/41598_2018_20749_Fig7_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3ea3/5797254/3d9fa07cbba2/41598_2018_20749_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3ea3/5797254/8f4c642f3ffd/41598_2018_20749_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3ea3/5797254/7ae1e7b88959/41598_2018_20749_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3ea3/5797254/a649a941fade/41598_2018_20749_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3ea3/5797254/ac8125e52b92/41598_2018_20749_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3ea3/5797254/3ace631c4e70/41598_2018_20749_Fig6_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3ea3/5797254/11e18d993b44/41598_2018_20749_Fig7_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3ea3/5797254/3d9fa07cbba2/41598_2018_20749_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3ea3/5797254/8f4c642f3ffd/41598_2018_20749_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3ea3/5797254/7ae1e7b88959/41598_2018_20749_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3ea3/5797254/a649a941fade/41598_2018_20749_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3ea3/5797254/ac8125e52b92/41598_2018_20749_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3ea3/5797254/3ace631c4e70/41598_2018_20749_Fig6_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3ea3/5797254/11e18d993b44/41598_2018_20749_Fig7_HTML.jpg

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