Cui W, Ren Q, Zhi Y S, Zhao X L, Wu Z P, Li P G, Tang W H
Laboratory of Optoelectronics Materials and Devices, School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China.
Center for Optoelectronics Materials and Devices, Department of Physics, Zhejiang Sci-Tech University, Hangzhou, 310018 Zhejiang, China.
J Nanosci Nanotechnol. 2018 May 1;18(5):3613-3618. doi: 10.1166/jnn.2018.14692.
Monoclinic gallium oxide thin films were deposited on c-plane sapphire substrates at various substrate temperatures ranging from 450 °C to 700 °C by radio frequency magnetron sputtering technology. X-ray diffraction results showed that the deposited β-Ga2O3 films were oriented at (01) direction. As the substrate temperature increased, the intensity of β-Ga2O3 peaks increased and bandgap decreased accordingly. Metal/semiconductor/metal structured solar-blind photodetectors based on β-Ga2O3 thin films growing at various substrate temperatures had been fabricated. The growth temperatures of thin films had no obvious influence on dark current and response to 365 nm light illuminations. The photoelectric properties such as responsivity and response speed of the thin films to 254 nm light illuminations were growth temperature dependent. At an applied bias of 50 V, the photodetectors prepared with 450 °C grown film had the highest responsivity of 2.18 A/W, and the photodetectors prepared with 700 °C grown film had the shortest rising time of 0.95 s under 254 nm light illuminations.
通过射频磁控溅射技术，在450℃至700℃的不同衬底温度下，在c面蓝宝石衬底上沉积了单斜氧化镓薄膜。X射线衍射结果表明，沉积的β-Ga2O3薄膜沿(01)方向取向。随着衬底温度升高，β-Ga2O3峰的强度增加，带隙相应减小。制备了基于在不同衬底温度下生长的β-Ga2O3薄膜的金属/半导体/金属结构日盲型光电探测器。薄膜的生长温度对暗电流和对365nm光照的响应没有明显影响。薄膜对254nm光照的响应率和响应速度等光电性能与生长温度有关。在50V偏压下，用450℃生长的薄膜制备的光电探测器在254nm光照下具有最高响应率2.18A/W，用700℃生长的薄膜制备的光电探测器在254nm光照下具有最短上升时间0.95s。
