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采用磁控共溅射制备掺锡氧化镓薄膜及金属-半导体-金属紫外探测器

Preparation of Sn-Doped GaO Thin Films and MSM Ultraviolet Detectors Using Magnetron Co-Sputtering.

作者信息

Liu Yantao, Huang Rong, Lin Tao, Dang Jiale, Huang Haoxiang, Shi Jiahao, Chen Sui

机构信息

Department of Electronic Engineering, Xi'an University of Technology, Xi'an 710048, China.

出版信息

Materials (Basel). 2024 Jul 1;17(13):3227. doi: 10.3390/ma17133227.

DOI:10.3390/ma17133227
PMID:38998311
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11242557/
Abstract

Sn-doped GaO thin films and metal-semiconductor-metal (MSM) ultraviolet detectors were prepared using the co-sputtering method to enhance their photoelectric performance. The results revealed that Sn doping can effectively change the optical and electrical properties of thin films, greatly improving the photoelectric responsiveness of the devices. Through microstructure testing results, all of the thin film structures were determined to be monoclinic beta phase gallium oxide. At a DC power of 30 W, the thickness of the Sn-doped thin film was 430 nm, the surface roughness of the thin film was 4.94 nm, and the carrier concentration, resistivity, and mobility reached 9.72 × 10 cm, 1.60 × 10 Ω·cm, and 45.05 cm/Vs, respectively. The optical results show that Sn doping clearly decreases the transmission of thin films and that the bandgap can decrease to 3.91 eV. Under 30 W DC power, the photo dark current ratio of the detector can reach 101, time responses of = 31 s and = 22.83 s were obtained, and the spectral responsivity reached 19.25 A/W.

摘要

采用共溅射法制备了掺锡的氧化镓薄膜和金属-半导体-金属（MSM）紫外探测器，以提高其光电性能。结果表明，锡掺杂能有效改变薄膜的光学和电学性质，大大提高器件的光电响应度。通过微观结构测试结果，确定所有薄膜结构均为单斜β相氧化镓。在30W直流功率下，掺锡薄膜的厚度为430nm，薄膜的表面粗糙度为4.94nm，载流子浓度、电阻率和迁移率分别达到9.72×10¹⁹cm⁻³、1.60×10²Ω·cm和45.05cm²/Vs。光学结果表明，锡掺杂明显降低了薄膜的透射率，带隙可降至3.91eV。在30W直流功率下，探测器的光暗电流比可达10¹，获得的上升时间tr = 31s和下降时间tf = 22.83s，光谱响应度达到19.25A/W。

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