在具有双层沟道结构的铟镓锌氧化物薄膜晶体管中掺杂氮

Doping Nitrogen in InGaZnO Thin Film Transistor with Double Layer Channel Structure.

作者信息

Chang Sheng-Po, Shan Deng

机构信息

Institute of Microelectronics and Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center National Cheng Kung University, Tainan 70101, Taiwan.

出版信息

J Nanosci Nanotechnol. 2018 Apr 1;18(4):2493-2497. doi: 10.1166/jnn.2018.14344.

DOI:10.1166/jnn.2018.14344

PMID:29442918

Abstract

This paper presents the electrical characteristics of doping nitrogen in an amorphous InGaZnO thin film transistor. The IGZO:N film, which acted as a channel layer, was deposited using RF sputtering with a nitrogen and argon gas mixture at room temperature. The optimized parameters of the IGZO:N/IGZO TFT are as follows: threshold voltage is 0.5 V, field effect mobility is 14.34 cm2V-1S-1. The on/off current ratio is 106 and subthreshold swing is 1.48 V/decade. The positive gate bias stress stability of InGaZnO doping with nitrogen shows improvement compared to doping with oxygen.

摘要

本文介绍了非晶铟镓锌氧化物薄膜晶体管中氮掺杂的电学特性。作为沟道层的IGZO:N薄膜是在室温下使用氮气和氩气混合气体通过射频溅射沉积的。IGZO:N/IGZO薄膜晶体管的优化参数如下：阈值电压为0.5V，场效应迁移率为14.34cm²V⁻¹s⁻¹。开/关电流比为10⁶，亚阈值摆幅为1.48V/十倍频程。与氧掺杂相比，氮掺杂的铟镓锌氧化物的正栅极偏置应力稳定性有所提高。