Shi Qiuwei, Aziz Izzat, Ciou Jin-Hao, Wang Jiangxin, Gao Dace, Xiong Jiaqing, Lee Pooi See
School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore.
School of Chemistry and Materials Science, Nanjing University of Information Science and Technology, Nanjing, 210044, People's Republic of China.
Nanomicro Lett. 2022 Sep 27;14(1):195. doi: 10.1007/s40820-022-00929-y.
A stable laminated AlO/HfO insulator is developed by atomic layer deposition at a relatively lower temperature of 150 °C. The flexible thin-film transistors (TFTs) with bottom-gate top-contacted configuration are fabricated on a flexible substrate with the AlO/HfO insulator. The flexible TFTs present the carrier mobilities of 9.7 cm V s, ON/OFF ratio of ~ 1.3 × 10, subthreshold voltage of 0.1 V, saturated current up to 0.83 mA, and subthreshold swing of 0.256 V dec.
Flexible thin-film transistors (TFTs) have attracted wide interest in the development of flexible and wearable displays or sensors. However, the conventional high processing temperatures hinder the preparation of stable and reliable dielectric materials on flexible substrates. Here, we develop a stable laminated AlO/HfO insulator by atomic layer deposition at a relatively lower temperature of 150 °C. A sputtered amorphous indium-gallium-zinc oxide (IGZO) with the stoichiometry of InGaZnO is used as the active channel material. The flexible TFTs with bottom-gate top-contacted configuration are further fabricated on a flexible polyimide substrate with the AlO/HfO nanolaminates. Benefited from the unique structural and compositional configuration in the nanolaminates consisting of amorphous AlO, crystallized HfO, and the aluminate Al–Hf–O phase, the as-prepared TFTs present the carrier mobilities of 9.7 cm V s, ON/OFF ratio of ~ 1.3 × 10, subthreshold voltage of 0.1 V, saturated current up to 0.83 mA, and subthreshold swing of 0.256 V dec, signifying a high-performance flexible TFT, which simultaneously able to withstand the bending radius of 40 mm. The TFTs with nanolaminate insulator possess satisfactory humidity stability and hysteresis behavior in a relative humidity of 60–70%, a temperature of 25–30 °C environment. The yield of IGZO-based TFTs with the nanolaminate insulator reaches 95%. [Image: see text]
The online version contains supplementary material available at 10.1007/s40820-022-00929-y.
通过原子层沉积在相对较低的150°C温度下制备出了一种稳定的层状AlO/HfO绝缘体。具有底栅顶接触结构的柔性薄膜晶体管（TFT）被制备在带有AlO/HfO绝缘体的柔性衬底上。这些柔性TFT的载流子迁移率为9.7 cm² V⁻¹ s⁻¹，开/关比约为1.3×10⁶，亚阈值电压为0.1 V，饱和电流高达0.83 mA，亚阈值摆幅为0.256 V dec⁻¹。
柔性薄膜晶体管（TFT）在柔性和可穿戴显示器或传感器的发展中引起了广泛关注。然而，传统的高加工温度阻碍了在柔性衬底上制备稳定且可靠的介电材料。在此，我们通过原子层沉积在相对较低的150°C温度下制备出了一种稳定的层状AlO/HfO绝缘体。使用化学计量比为InGaZnO的溅射非晶铟镓锌氧化物（IGZO）作为有源沟道材料。具有底栅顶接触结构的柔性TFT进一步被制备在带有AlO/HfO纳米层的柔性聚酰亚胺衬底上。受益于由非晶AlO、结晶HfO和铝酸盐Al–Hf–O相组成的纳米层中独特的结构和成分配置，所制备的TFT呈现出9.7 cm² V⁻¹ s⁻¹的载流子迁移率、约1.3×10⁶的开/关比、0.1 V的亚阈值电压、高达0.83 mA的饱和电流以及0.256 V dec⁻¹的亚阈值摆幅，表明这是一种高性能的柔性TFT，同时能够承受40 mm的弯曲半径。具有纳米层绝缘体的TFT在60 - 70%相对湿度、25 - 30°C温度环境下具有令人满意的湿度稳定性和滞后行为。基于纳米层绝缘体的IGZO基TFT的良品率达到95%。[图片：见正文]
在线版本包含可在10.1007/s40820-022-00929-y获取的补充材料。
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