College of Chemistry and Chemical Engineering, Engineering Research Center of Advanced Ferroelectric Functional Materials, Key Laboratory of Phytochemistry of Shaanxi Province, Baoji University of Arts and Sciences, Baoji 721013, PR China.
College of Chemistry and Chemical Engineering, Engineering Research Center of Advanced Ferroelectric Functional Materials, Key Laboratory of Phytochemistry of Shaanxi Province, Baoji University of Arts and Sciences, Baoji 721013, PR China.
J Colloid Interface Sci. 2018 May 15;518:84-91. doi: 10.1016/j.jcis.2018.02.023. Epub 2018 Feb 7.
We developed a facile and efficient route to prepare highly porous nanostructure MnO by etching of proton-type layered manganese oxide (H-MnO) with sulfuric acid (HSO). Results from TEM images and N adsorption showed that HSO etching created porous MnO with average pore size of about 4 nm and high specific surface area (315 m g). With such porous structure, the obtained MnO exhibits a high specific capacitance of 253 F g and enhanced rate capability (62.1% capacitance retention from 0.5 to 10 A g) when comparing with the H-MnO precursor (154 F g, 45.5%) and annealed H-MnO in the absence of HSO (134 F g, 43.3%). The excellent capacitive properties demonstrate that creation of porous structure on H-MnO not only provides large ion-accessible surface area for efficient charge storage, but also to some extent promotes the kinetics of electrochemical reactions.
我们开发了一种简便高效的路线，通过用硫酸（HSO）刻蚀质子型层状锰氧化物（H-MnO）来制备高多孔纳米结构 MnO。TEM 图像和 N 吸附结果表明，HSO 刻蚀生成了具有约 4nm 平均孔径和高比表面积（315m²g）的多孔 MnO。具有这种多孔结构，与 H-MnO 前体（253Fg，62.1%电容保持率从 0.5 到 10Ag）和在没有 HSO 的情况下退火的 H-MnO（134Fg，43.3%）相比，获得的 MnO 表现出高比电容（154Fg）。优异的电容性能表明，在 H-MnO 上形成多孔结构不仅提供了用于有效电荷存储的大离子可及表面积，而且在某种程度上促进了电化学反应的动力学。
