Jung Jinsu, Jannat Azmira, Akhtar M Shaheer, Yang O-Bong
School of Semiconductor and Chemical Engineering, Solar Energy Research Center, Chonbuk National University, Jeonju, Jeonbuk 54896, Republic of Korea.
J Nanosci Nanotechnol. 2018 Feb 1;18(2):1274-1278. doi: 10.1166/jnn.2018.14928.
In this work, the deposition of double layer ARC on p-type Si solar cells was carried out by simple spin coating using sol-gel derived Al2O3 and TiO2 precursors for the fabrication of crystalline Si solar cells. The first ARC layer was created by freshly prepared sol-gel derived Al2O3 precursor using spin coating technique and then second ARC layer of TiO2 was deposited with sol-gel derived TiO2 precursor, which was finally annealed at 400 °C. The double layer Al2O3/TiO2 ARC on Si wafer exhibited the low average reflectance of 4.74% in the wavelength range of 400 and 1000 nm. The fabricated solar cells based on double TiO2/Al2O3 ARC attained the conversion efficiency of ~13.95% with short circuit current (JSC) of 35.27 mA/cm2, open circuit voltage (VOC) of 593.35 mV and fill factor (FF) of 66.67%. Moreover, the fabricated solar cells presented relatively low series resistance (Rs) as compared to single layer ARCs, resulting in the high VOC and FF.
在这项工作中，通过使用溶胶 - 凝胶法制备的Al2O3和TiO2前驱体进行简单旋涂，在p型硅太阳能电池上沉积双层增透膜，用于制造晶体硅太阳能电池。第一层增透膜由新制备的溶胶 - 凝胶法Al2O3前驱体通过旋涂技术制备，然后用溶胶 - 凝胶法TiO2前驱体沉积TiO2的第二层增透膜，最后在400℃退火。硅片上的双层Al2O3/TiO2增透膜在400至1000nm波长范围内表现出4.74%的低平均反射率。基于双层TiO2/Al2O3增透膜制造的太阳能电池实现了约13.95%的转换效率，短路电流（JSC）为35.27 mA/cm2，开路电压（VOC）为593.35 mV，填充因子（FF）为66.67%。此外，与单层增透膜相比，制造的太阳能电池呈现出相对较低的串联电阻（Rs），从而导致高VOC和FF。
