Uzum Abdullah, Fukatsu Ken, Kanda Hiroyuki, Kimura Yutaka, Tanimoto Kenji, Yoshinaga Seiya, Jiang Yunjian, Ishikawa Yasuaki, Uraoka Yukiharu, Ito Seigo
Department of Electrical Engineering and Computer Sciences, Graduate School of Engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo 671-2280, Japan.
Specialty Materials Research Laboratory, Nissan Chemical Industries, Ltd., 11-1 Kitasode, Sodegaurashi, Chiba 299-0266, Japan.
Nanoscale Res Lett. 2014 Dec 5;9(1):659. doi: 10.1186/1556-276X-9-659. eCollection 2014.
The phosphorus barrier layers at the doping procedure of silicon wafers were fabricated using a spin-coating method with a mixture of silica-sol and tetramethylammonium hydroxide, which can be formed at the rear surface prior to the front phosphorus spin-on-demand (SOD) diffusion and directly annealed simultaneously with the front phosphorus layer. The optimization of coating thickness was obtained by changing the applied spin-coating speed; from 2,000 to 8,000 rpm. The CZ-Si p-type silicon solar cells were fabricated with/without using the rear silica-sol layer after taking the sheet resistance measurements, SIMS analysis, and SEM measurements of the silica-sol material evaluations into consideration. For the fabrication of solar cells, a spin-coating phosphorus source was used to form the n(+) emitter and was then diffused at 930°C for 35 min. The out-gas diffusion of phosphorus could be completely prevented by spin-coated silica-sol film placed on the rear side of the wafers coated prior to the diffusion process. A roughly 2% improvement in the conversion efficiency was observed when silica-sol was utilized during the phosphorus diffusion step. These results can suggest that the silica-sol material can be an attractive candidate for low-cost and easily applicable spin-coating barrier for any masking purpose involving phosphorus diffusion.
在硅片掺杂过程中，磷阻挡层是通过旋涂法制备的，使用的是硅溶胶和氢氧化四甲铵的混合物，该混合物可在正面按需旋涂磷扩散之前在背面形成，并与正面磷层同时直接退火。通过改变旋涂速度（从2000转/分钟到8000转/分钟）来优化涂层厚度。在考虑了对硅溶胶材料进行薄层电阻测量、二次离子质谱分析和扫描电子显微镜测量之后，制备了有无背面硅溶胶层的直拉法p型硅太阳能电池。对于太阳能电池的制备，使用旋涂磷源形成n(+)发射极，然后在930°C下扩散35分钟。通过在扩散过程之前放置在硅片背面的旋涂硅溶胶膜，可以完全防止磷的排气扩散。在磷扩散步骤中使用硅溶胶时，观察到转换效率提高了约2%。这些结果表明，硅溶胶材料对于涉及磷扩散的任何掩膜目的而言，可能是一种具有吸引力的低成本且易于应用的旋涂阻挡材料。
