Kim Dae-Kwang, Lee Hyung-Joo
CF Technology Division, AUK Corporation, Iksan 54630, Jeonbuk, South Korea.
J Nanosci Nanotechnol. 2018 Mar 1;18(3):2014-2017. doi: 10.1166/jnn.2018.14952.
Strain compensation for multiple-quantum wells (MQWs) relative to the efficiency improvement of infrared light-emitting diodes (IR-LEDs) was investigated through the use of an InxGa1-xP strain barrier. The InxGa1-xP barrier, which was inserted between the n-confinement and active regions, developed for the reduction of lattice-mismatched strains in GaAs/AlGaAs and InGaAs/GaAs MQWs. Through photoluminescence, improved intensity was displayed in InGaAs/GaAs MQWs having InxGa1-xP strain barriers, with a significant increase in the intensity observed at the In0.47GaP strain barrier. This result is attributed to strain compensation between the In0.47GaP tensile strain barrier used and the In0.07GaAs compressive strain in MQWs. Through results based on InGaAs/GaAs MQWs, the highest output power of 6 mW was obtained at the In0.47GaP strain barrier, which shows a relative increase of almost 20% as compared to conventional MQWs.
通过使用InxGa1-xP应变势垒，研究了多量子阱（MQW）的应变补偿对红外发光二极管（IR-LED）效率提高的影响。插入n限制区和有源区之间的InxGa1-xP势垒，是为了减少GaAs/AlGaAs和InGaAs/GaAs MQW中的晶格失配应变而开发的。通过光致发光，具有InxGa1-xP应变势垒的InGaAs/GaAs MQW显示出强度提高，在In0.47GaP应变势垒处观察到强度显著增加。该结果归因于所用的In0.47GaP拉伸应变势垒与MQW中In0.07GaAs压缩应变之间的应变补偿。基于InGaAs/GaAs MQW的结果，在In0.47GaP应变势垒处获得了6 mW的最高输出功率，与传统MQW相比，相对增加了近20%。
