Department of Carbon and Nano Engineering, JeonJu University, Jeonju 55069, Korea.
CF Technology Division, AUK Corporation, Iksan 54630, Korea.
J Nanosci Nanotechnol. 2019 Apr 1;19(4):2224-2227. doi: 10.1166/jnn.2019.15974.
Optimum strain compensation structures for InGaAs-based MQWs were investigated to obtain a higher output power for infrared lighting-emitting diodes (IR-LEDs) requiring a 940 nm wave-length. A GaAsP tensile strain material for compensating the compressive strain of InGaAs quantum wells was used as a quantum barrier. To improve upon the excessive unbalance strain condition caused due to the InGaAs quantum well and GaAsP quantum barrier, a conditioned AlGaAs strain balancing barrier was also investigated. Through subsequent photoluminescence (PL) measurements, it was found that the GaAsP tensile strain barrier could effectively compensate for the compressive strain of InGaAs quantum wells. Furthermore, the PL intensity of InGaAs/GaAsP MQWs was observed to be markedly improved by using an AlGaAs strain balancing barrier. A fabricated IR-LED chip, having InGaAs/GaAsP MQWs with an AlGaAs strain balancing barrier, showed a 60% higher light output power than conventional MQWs. These results subsequently suggest that using GaAsP and AlGaAs barriers effectively improved unbalanced strain conditions of lattice-mismatched InGaAs based MQWs requiring a 940 nm emitting wavelength.
为了获得需要 940nm 波长的红外发光二极管 (IR-LED) 的更高输出功率，研究了基于 InGaAs 的 MQWs 的最佳应变量补偿结构。使用 GaAsP 拉伸应变量材料作为量子势垒来补偿 InGaAs 量子阱的压缩应变。为了改善由于 InGaAs 量子阱和 GaAsP 量子势垒引起的过度不平衡应变状态，还研究了条件 AlGaAs 应变量平衡势垒。通过随后的光致发光 (PL) 测量，发现 GaAsP 拉伸应变量势垒可以有效地补偿 InGaAs 量子阱的压缩应变。此外，通过使用 AlGaAs 应变量平衡势垒，观察到 InGaAs/GaAsP MQWs 的 PL 强度显著提高。具有 AlGaAs 应变量平衡势垒的 InGaAs/GaAsP MQWs 制造的 IR-LED 芯片的光输出功率比传统 MQWs 高 60%。这些结果表明，使用 GaAsP 和 AlGaAs 势垒可以有效地改善需要 940nm 发射波长的晶格失配 InGaAs 基 MQWs 的不平衡应变状态。
