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扭转应变外尔半金属中的电子输运

Electronic transport in torsional strained Weyl semimetals.

作者信息

Soto-Garrido Rodrigo, Muñoz Enrique

机构信息

Facultad de Ingeniería y Tecnología, Universidad San Sebastián, Bellavista 7, Santiago 8420524, Chile.

出版信息

J Phys Condens Matter. 2018 May 16;30(19):195302. doi: 10.1088/1361-648X/aaba07. Epub 2018 Mar 27.

DOI:10.1088/1361-648X/aaba07
PMID:29583136
Abstract

In a recent paper (Muñoz and Soto-Garrido 2017 J. Phys.: Condens. Matter 29 445302) we have studied the effects of mechanical strain and magnetic field on the electronic transport properties in graphene. In this article we extended our work to Weyl semimetals (WSM). We show that although the WSM are 3D materials, most of the analysis done for graphene (2D material) can be carried out. In particular, we studied the electronic transport through a cylindrical region submitted to torsional strain and external magnetic field. We provide exact analytical expressions for the scattering cross section and the transmitted electronic current. In addition, we show the node-polarization effect on the current and propose a recipe to measure the torsion angle from transmission experiments.

摘要

在最近的一篇论文(穆尼奥斯和索托 - 加里多,2017年,《物理学杂志:凝聚态物质》29卷,445302)中,我们研究了机械应变和磁场对石墨烯中电子输运性质的影响。在本文中,我们将工作扩展到了外尔半金属(WSM)。我们表明,尽管WSM是三维材料,但对石墨烯(二维材料)所做的大多数分析都可以进行。特别是,我们研究了通过承受扭转变形和外部磁场的圆柱形区域的电子输运。我们给出了散射截面和透射电子电流的精确解析表达式。此外,我们展示了电流上的节点极化效应,并提出了一种从透射实验测量扭转角的方法。

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Electronic transport in torsional strained Weyl semimetals.扭转应变外尔半金属中的电子输运
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引用本文的文献

1
Electronic Transport in Weyl Semimetals with a Uniform Concentration of Torsional Dislocations.具有均匀浓度扭转位错的外尔半金属中的电子输运
Nanomaterials (Basel). 2022 Oct 21;12(20):3711. doi: 10.3390/nano12203711.
2
Thermo-Magneto-Electric Transport through a Torsion Dislocation in a Type I Weyl Semimetal.通过 I 型外尔半金属中的扭折位错的热磁电输运
Nanomaterials (Basel). 2021 Nov 5;11(11):2972. doi: 10.3390/nano11112972.