Bonilla Daniel, Muñoz Enrique
Facultad de Física, Pontificia Universidad Católica de Chile, Vicuña Mackenna 4860, Santiago 8331150, Chile.
Nanomaterials (Basel). 2022 Oct 21;12(20):3711. doi: 10.3390/nano12203711.
In this article, we consider a theoretical model for a type I Weyl semimetal, under the presence of a diluted uniform concentration of torsional dislocations. By means of a mathematical analysis for partial wave scattering (phase-shift) for the T-matrix, we obtain the corresponding retarded and advanced Green's functions that include the effects of multiple scattering events with the ensemble of randomly distributed dislocations. Combining this analysis with the Kubo formalism, and including vertex corrections, we calculate the electronic conductivity as a function of temperature and concentration of dislocations. We further evaluate our analytical formulas to predict the electrical conductivity of several transition metal monopnictides, i.e., TaAs, TaP, NbAs, and NbP.
在本文中，我们考虑了一种I型外尔半金属的理论模型，该模型存在稀释均匀浓度的扭转位错。通过对T矩阵的分波散射（相移）进行数学分析，我们得到了相应的推迟和超前格林函数，其中包含了与随机分布位错系综的多次散射事件的影响。将该分析与久保形式理论相结合，并包括顶点修正，我们计算了作为温度和位错浓度函数的电导率。我们进一步评估我们的解析公式，以预测几种过渡金属单磷化物（即TaAs、TaP、NbAs和NbP）的电导率。
