Electronic Transport in Weyl Semimetals with a Uniform Concentration of Torsional Dislocations.

In this article, we consider a theoretical model for a type I Weyl semimetal, under the presence of a diluted uniform concentration of torsional dislocations. By means of a mathematical analysis for partial wave scattering (phase-shift) for the T-matrix, we obtain the corresponding retarded and advanced Green's functions that include the effects of multiple scattering events with the ensemble of randomly distributed dislocations. Combining this analysis with the Kubo formalism, and including vertex corrections, we calculate the electronic conductivity as a function of temperature and concentration of dislocations. We further evaluate our analytical formulas to predict the electrical conductivity of several transition metal monopnictides, i.e., TaAs, TaP, NbAs, and NbP.