Bonilla Daniel, Muñoz Enrique, Soto-Garrido Rodrigo
Physics Institute, Pontificia Universidad Católica de Chile, Avenida Vicuña Mackenna 4860, Santiago 8970117, Chile.
Research Center for Nanotechnology and Advanced Materials, CIEN-UC, Pontificia Universidad Católica de Chile, Avenida Vicuña Mackenna 4860, Santiago 8970117, Chile.
Nanomaterials (Basel). 2021 Nov 5;11(11):2972. doi: 10.3390/nano11112972.
Herein, we study electronic and thermoelectric transport in a type I Weyl semimetal nanojunction, with a torsional dislocation defect, in the presence of an external magnetic field parallel to the dislocation axis. The defect is modeled in a cylindrical geometry, as a combination of a gauge field accounting for torsional strain and a delta-potential barrier for the lattice mismatch effect. In the Landauer formalism, we find that due to the combination of strain and magnetic field, the electric current exhibits chiral valley-polarization, and the conductance displays the signature of Landau levels. We also compute the thermal transport coefficients, where a high thermopower and a large figure of merit are predicted for the junction.
在此,我们研究了在存在平行于位错轴的外部磁场时,具有扭转位错缺陷的I型外尔半金属纳米结中的电子和热输运。该缺陷在圆柱几何结构中建模,由一个考虑扭转应变的规范场和一个用于晶格失配效应的δ势垒组合而成。在朗道形式理论中,我们发现由于应变和磁场的共同作用,电流呈现出手性谷极化,并且电导显示出朗道能级的特征。我们还计算了热输运系数,预测该结具有高热电势和大的品质因数。