Electrodynamics and Physical Electronics Group , Brandenburg University of Technology , 03046 Cottbus , Germany.
Institute of Theoretical Electrical Engineering , Ruhr University Bochum , 44780 Bochum , Germany.
ACS Appl Mater Interfaces. 2018 May 2;10(17):14857-14868. doi: 10.1021/acsami.7b19836. Epub 2018 Apr 18.
We report on the resistive switching in TiN/Ti/HfO/TiN memristive devices. A resistive switching model for the device is proposed, taking into account important experimental and theoretical findings. The proposed switching model is validated using 2D and 3D kinetic Monte Carlo simulation models. The models are consistently coupled to the electric field and different current transport mechanisms such as direct tunneling, trap-assisted tunneling, ohmic transport, and transport through a quantum point contact have been considered. We find that the numerical results are in excellent agreement with experimentally obtained data. Important device parameters, which are difficult or impossible to measure in experiments, are calculated. This includes the shape of the conductive filament, width of filament constriction, current density, and temperature distribution. To obtain insights in the operation of the device, consecutive cycles have been simulated. Furthermore, the switching kinetics for the forming and set process for different applied voltages is investigated. Finally, the influence of an annealing process on the filament growth, especially on the filament growth direction, is discussed.
我们报告了 TiN/Ti/HfO/TiN 忆阻器件中的电阻开关现象。提出了一个考虑到重要实验和理论发现的器件电阻开关模型。使用二维和三维动力学蒙特卡罗模拟模型验证了所提出的开关模型。这些模型与电场一致耦合，并考虑了不同的电流传输机制，如直接隧穿、陷阱辅助隧穿、欧姆传输和通过量子点接触的传输。我们发现数值结果与实验获得的数据非常吻合。计算了一些重要的器件参数，这些参数在实验中很难或不可能测量，包括导电丝的形状、丝缩窄的宽度、电流密度和温度分布。为了深入了解器件的工作原理，模拟了连续循环。此外，还研究了不同外加电压下的形成和置位过程的开关动力学。最后，讨论了退火过程对丝的生长，特别是丝的生长方向的影响。
