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间隙镍对半赫斯勒合金TiNiSn热电性能的影响。

Impact of Interstitial Ni on the Thermoelectric Properties of the Half-Heusler TiNiSn.

作者信息

Barczak Sonia A, Buckman Jim, Smith Ronald I, Baker Annabelle R, Don Eric, Forbes Ian, Bos Jan-Willem G

机构信息

Institute of Chemical Sciences and Centre for Advanced Energy Storage and Recovery, School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh EH14 4AS, UK.

Institute of Petroleum Engineering, Heriot-Watt University, Edinburgh EH14 4AS, UK.

出版信息

Materials (Basel). 2018 Mar 30;11(4):536. doi: 10.3390/ma11040536.

DOI:10.3390/ma11040536
PMID:29601547
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5951420/
Abstract

TiNiSn is an intensively studied half-Heusler alloy that shows great potential for waste heat recovery. Here, we report on the structures and thermoelectric properties of a series of metal-rich TiNiSn compositions prepared via solid-state reactions and hot pressing. A general relation between the amount of interstitial Ni and lattice parameter is determined from neutron powder diffraction. High-resolution synchrotron X-ray powder diffraction reveals the occurrence of strain broadening upon hot pressing, which is attributed to the metastable arrangement of interstitial Ni. Hall measurements confirm that interstitial Ni causes weak n-type doping and a reduction in carrier mobility, which limits the power factor to 2.5-3 mW m K for these samples. The thermal conductivity was modelled within the Callaway approximation and is quantitively linked to the amount of interstitial Ni, resulting in a predicted value of 12.7 W m K at 323 K for stoichiometric TiNiSn. Interstitial Ni leads to a reduction of the thermal band gap and moves the peak ZT = 0.4 to lower temperatures, thus offering the possibility to engineer a broad ZT plateau. This work adds further insight into the impact of small amounts of interstitial Ni on the thermal and electrical transport of TiNiSn.

摘要

TiNiSn是一种经过深入研究的半赫斯勒合金,在废热回收方面显示出巨大潜力。在此,我们报告了通过固态反应和热压制备的一系列富金属TiNiSn组合物的结构和热电性能。通过中子粉末衍射确定了间隙Ni含量与晶格参数之间的一般关系。高分辨率同步加速器X射线粉末衍射揭示了热压过程中应变展宽的出现,这归因于间隙Ni的亚稳排列。霍尔测量证实,间隙Ni导致弱n型掺杂并降低载流子迁移率,这将这些样品的功率因子限制在2.5 - 3 mW m⁻¹ K⁻²。热导率在卡洛威近似范围内进行建模,并与间隙Ni的含量定量相关,对于化学计量比的TiNiSn,在323 K时预测值为12.7 W m⁻¹ K⁻¹。间隙Ni导致热带隙减小,并将峰值ZT = 0.4移至更低温度,从而提供了设计宽ZT平台的可能性。这项工作进一步深入了解了少量间隙Ni对TiNiSn热传输和电传输的影响。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e714/5951420/ad996961ddaf/materials-11-00536-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e714/5951420/06ddd565fd94/materials-11-00536-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e714/5951420/4776c7a4d131/materials-11-00536-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e714/5951420/7bc175f966d5/materials-11-00536-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e714/5951420/76238f674a41/materials-11-00536-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e714/5951420/0de7873cc504/materials-11-00536-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e714/5951420/ad996961ddaf/materials-11-00536-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e714/5951420/06ddd565fd94/materials-11-00536-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e714/5951420/4776c7a4d131/materials-11-00536-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e714/5951420/7bc175f966d5/materials-11-00536-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e714/5951420/76238f674a41/materials-11-00536-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e714/5951420/0de7873cc504/materials-11-00536-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e714/5951420/ad996961ddaf/materials-11-00536-g006.jpg

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本文引用的文献

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Grain-by-Grain Compositional Variations and Interstitial Metals-A New Route toward Achieving High Performance in Half-Heusler Thermoelectrics.逐粒组分变化和间隙金属——实现半赫斯勒热电性能突破的新途径。
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Effect of Spark Plasma Sintering on the Structure and Properties of TiZrNiSn Half-Heusler Alloys.
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