Mastronardi L, Banakar M, Khokhar A Z, Hattasan N, Rutirawut T, Bucio T Domínguez, Grabska K M, Littlejohns C, Bazin A, Mashanovich G, Gardes F Y
Opt Express. 2018 Mar 19;26(6):6663-6673. doi: 10.1364/OE.26.006663.
The ever-increasing demand for integrated, low power interconnect systems is pushing the bandwidth density of CMOS photonic devices. Taking advantage of the strong Franz-Keldysh effect in the C and L communication bands, electro-absorption modulators in Ge and GeSi are setting a new standard in terms of device footprint and power consumption for next generation photonics interconnect arrays. In this paper, we present a compact, low power electro-absorption modulator (EAM) Si/GeSi hetero-structure based on an 800 nm SOI overlayer with a modulation bandwidth of 56 GHz. The device design and fabrication tolerant process are presented, followed by the measurement analysis. Eye diagram measurements show a dynamic ER of 5.2 dB at a data rate of 56 Gb/s at 1566 nm, and calculated modulator power is 44 fJ/bit.
对集成、低功耗互连系统不断增长的需求正在推动CMOS光子器件的带宽密度。利用C波段和L波段通信中的强弗朗兹-凯尔迪什效应，锗和锗硅中的电吸收调制器在下一代光子互连阵列的器件尺寸和功耗方面正在树立新的标准。在本文中，我们展示了一种基于800 nm SOI顶层的紧凑、低功耗电吸收调制器（EAM）硅/锗硅异质结构，其调制带宽为56 GHz。介绍了器件设计和制造容差工艺，随后进行了测量分析。眼图测量显示，在1566 nm波长、56 Gb/s的数据速率下，动态消光比为5.2 dB，计算得出的调制器功耗为44 fJ/比特。
