Opt Express. 2023 Mar 13;31(6):10732-10743. doi: 10.1364/OE.484380.
We studied a high-speed Ge/Si electro-absorption optical modulator (EAM) evanescently coupled with a Si waveguide of a lateral p-n junction for a high-bandwidth optical interconnect over a wide range of temperatures from 25 °C to 85 °C. We demonstrated 56 Gbps high-speed operation at temperatures up to 85 °C. From the photoluminescence spectra, we confirmed that the bandgap energy dependence on temperature is relatively small, which is consistent with the shift in the operation wavelengths with increasing temperature for a Ge/Si EAM. We also demonstrated that the same device operates as a high-speed and high-efficiency Ge photodetector with the Franz-Keldysh (F-K) and avalanche-multiplication effects. These results demonstrate that the Ge/Si stacked structure is promising for both high-performance optical modulators and photodetectors integrated on Si platforms.
我们研究了高速 Ge/Si 电吸收光调制器 (EAM)，其与侧向 p-n 结硅波导的倏逝耦合，实现了在 25°C 至 85°C 的宽温度范围内的高速光互连。我们在高达 85°C 的温度下实现了 56 Gbps 的高速运行。从光致发光光谱中，我们证实了带隙能量对温度的依赖性相对较小，这与 Ge/Si EAM 随温度升高而发生的工作波长的偏移是一致的。我们还证明，相同的器件可以作为具有 Franz-Keldysh（F-K）和雪崩倍增效应的高速、高效率的 Ge 光电探测器工作。这些结果表明，Ge/Si 堆叠结构有望在 Si 平台上集成高性能光调制器和光电探测器。
