Skandalos Ilias, Bucio Thalía Domínguez, Mastronardi Lorenzo, Yu Guomin, Zilkie Aaron, Gardes Frederic Y
Optoelectronics Research Centre, University of Southampton, Southampton, UK.
Rockley Photonics Inc., Pasadena, CA, USA.
Commun Eng. 2025 May 1;4(1):82. doi: 10.1038/s44172-025-00421-6.
The exponential growth of data-intensive artificial intelligence necessitates ultra-fast and energy efficient transceivers in data centres. Quantum-confined Stark effect (QCSE) modulators offer promising solutions, combining high-speed modulation with minimal footprint and superior energy efficiency. Here, we demonstrate a monolithically integrated O-band Ge/SiGe QCSE modulator operating at 100 Gb s, seamlessly integrated with silicon nitride (SiN) waveguides on both silicon and silicon-on-insulator substrates. Our modulator achieves <1 dB coupling loss, <63 fJ bit energy consumption, and >5 dB static extinction ratio, while maintaining performance across a 20-80 °C temperature range. Leveraging CMOS-compatible fabrication processes, we incorporate multiple quantum-well stacks grown at wafer scale on silicon, enabling large-scale production. The modulator's substrate-agnostic integration with back-end of line grown SiN layers, presents a scalable approach for cost-effective co-integration of electronic and photonic components. This work advances high-speed, energy-efficient optical modulators and paves the way for next-generation photonic integrated circuits in data centre interconnects.
数据密集型人工智能的指数级增长，使得数据中心需要超高速且节能的收发器。量子限制斯塔克效应（QCSE）调制器提供了有前景的解决方案，它将高速调制与最小的占地面积和卓越的能源效率相结合。在此，我们展示了一种单片集成的O波段Ge/SiGe QCSE调制器，其工作速率为100 Gb/s，可在硅衬底和绝缘体上硅衬底上与氮化硅（SiN）波导无缝集成。我们的调制器实现了<1 dB的耦合损耗、<63 fJ/bit的能耗以及>5 dB的静态消光比，同时在20 - 80°C的温度范围内保持性能。利用与CMOS兼容的制造工艺，我们在硅片上生长了多个量子阱堆栈，实现了大规模生产。调制器与线后端生长的SiN层的与衬底无关的集成，为电子和光子组件的经济高效共集成提供了一种可扩展的方法。这项工作推动了高速、节能光调制器的发展，并为数据中心互连中的下一代光子集成电路铺平了道路。
