Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP , F-75005 Paris , France.
LPEM, ESPCI Paris, PSL University, CNRS , F-75005 Paris , France.
J Am Chem Soc. 2018 Apr 18;140(15):5033-5036. doi: 10.1021/jacs.8b02039. Epub 2018 Apr 10.
We report the synthesis of nanocrystals with an optical feature in the THz range. To do so, we develop a new synthetic procedure for the growth of HgTe, HgSe, and HgS nanocrystals, with strong size tunability from 5 to 200 nm. This is used to tune the absorption of the nanocrystals all over the infrared range up to terahertz (from 2 to 65 μm for absorption peak and even 200 μm for cutoff wavelength). The interest for this procedure is not limited to large sizes since for small objects we demonstrate low aggregation and good shape control (i.e., spherical object) while using nonexpansive and simple mercury halogenide precursors. By integrating these nanocrystals into an electrolyte-gated transistor, we evidence a change of carrier density from p-doped to n-doped as the confinement is vanishing.
我们报告了一种在太赫兹范围内具有光学特性的纳米晶体的合成。为此,我们开发了一种新的 HgTe、HgSe 和 HgS 纳米晶体生长的合成方法,其尺寸可调范围从 5nm 到 200nm。这用于调整纳米晶体在整个红外范围内的吸收,直至太赫兹范围(从 2μm 到 65μm 的吸收峰,甚至 200μm 的截止波长)。该方法的意义不仅限于大尺寸,因为对于小物体,我们证明了在使用非膨胀和简单的汞卤化物前体时,低聚集和良好的形状控制(即,球形物体)。通过将这些纳米晶体集成到电解质门控晶体管中,我们证明了当限制消失时,载流子密度从 p 型掺杂变为 n 型掺杂。