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具有多量子阱的钙钛矿发光二极管中降低的效率滚降和增强的稳定性

Reduced Efficiency Roll-Off and Enhanced Stability in Perovskite Light-Emitting Diodes with Multiple Quantum Wells.

作者信息

Yang Ming, Wang Nana, Zhang Shuting, Zou Wei, He Yarong, Wei Yingqiang, Xu Mengmeng, Wang Jianpu, Huang Wei

机构信息

Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) , Nanjing Tech University (NanjingTech) , 30 South Puzhu Road , Nanjing 211816 , China.

Shaanxi Institute of Flexible Electronics (SIFE) , Northwestern Polytechnical University (NPU) , 127 West Youyi Road , Xi'an 710072 , Shaanxi , China.

出版信息

J Phys Chem Lett. 2018 Apr 19;9(8):2038-2042. doi: 10.1021/acs.jpclett.8b00600. Epub 2018 Apr 9.

Abstract

Mixed-formamidinium (FA) and -cesium (Cs) cations were used to fabricate multiple quantum well (MQW) perovskite light-emitting diodes (PeLEDs). The partial substitution of FA with Cs facilitates the formation of wider quantum wells, which can effectively reduce efficiency roll-off by suppressing Auger recombination. The device has a peak external quantum efficiency (EQE) of 7.8% at a current density of 125 mA cm, maintaining an EQE of ∼6.6% at a high current density of 500 mA cm. Due to the improved stability of mixed-cation structure, we achieve a PeLED device with a lifetime of ∼31 h under a constant current density of 10 mA cm.

摘要

采用混合甲脒(FA)和铯(Cs)阳离子来制备多量子阱(MQW)钙钛矿发光二极管(PeLED)。用Cs部分替代FA有助于形成更宽的量子阱,这可以通过抑制俄歇复合有效地降低效率滚降。该器件在电流密度为125 mA/cm²时的峰值外量子效率(EQE)为7.8%,在500 mA/cm²的高电流密度下保持约6.6%的EQE。由于混合阳离子结构稳定性的提高,我们实现了在10 mA/cm²的恒定电流密度下寿命约为31小时的PeLED器件。

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