Fan Chao, Liu Zhe, Yuan Shuo, Meng Xiancheng, An Xia, Jing Yongkai, Sun Chun, Zhang Yonghui, Zhang Zihui, Wang Mengjun, Zheng Hongxing, Li Erping
State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, Tianjin 300401, China.
Zhejiang Provincial Key Laboratory of Advanced Microelectronic Intelligent Systems and Applications, Hangzhou 310027, China.
ACS Appl Mater Interfaces. 2021 Aug 4;13(30):35889-35896. doi: 10.1021/acsami.1c06305. Epub 2021 Jul 20.
Two dimensional (2D) tin disulfide (SnS) has attracted growing interest as a promising high performance photodetector with superior performance such as fast response time, high responsivity, and good stability. However, SnS-based photodetectors still face great challenges, and the photodetection performance needs to be improved for practical applications. Herein, indium-doped SnS (In-SnS) few layers were exfoliated from CVT-grown single crystals, which were synthesized by chemical vapor transport. Photodetectors based on In-SnS few layers were fabricated and detected. Compared with photodetectors based on pristine SnS, photodetectors based on In-SnS few layers exhibited better photodetection performances, including higher responsivities, higher external quantum efficiencies, and greater normalized detectivities. The responsivity (), external quantum efficiency (EQE), and normalized detectivity (*) were increased by up to 2 orders of magnitude after In doping. Considering responsivity and response time, the photodetector based on 1.4 at. % In-SnS few layers exhibited an optimal photodetection performance with a high of 153.8 A/W, a high EQE of 4.72 × 10 %, a great * of 5.81 × 10 Jones, and a short response time of 13 ms. Our work provides an efficient path to enhance photodetection performances of photodetectors based on SnS for future high-performance optoelectronic applications.
二维（2D）二硫化锡（SnS）作为一种具有快速响应时间、高响应度和良好稳定性等优异性能的高性能光电探测器，已引起越来越多的关注。然而，基于SnS的光电探测器仍面临巨大挑战，其光电探测性能需要进一步提升以满足实际应用需求。在此，通过化学气相传输法合成的CVT生长的单晶中剥离出了铟掺杂的SnS（In-SnS）少层。制备并检测了基于In-SnS少层的光电探测器。与基于原始SnS的光电探测器相比，基于In-SnS少层的光电探测器表现出更好的光电探测性能，包括更高的响应度、更高的外量子效率和更高的归一化探测率。铟掺杂后，响应度（）、外量子效率（EQE）和归一化探测率（）提高了多达2个数量级。综合考虑响应度和响应时间，基于1.4原子百分比In-SnS少层的光电探测器表现出最佳的光电探测性能，具有153.8 A/W的高响应度、4.72×10%的高EQE、5.81×10 Jones的高以及13 ms的短响应时间。我们的工作为未来高性能光电子应用中基于SnS的光电探测器提高光电探测性能提供了一条有效途径。
