Kwon Younghoon, Kim Jongsung
J Nanosci Nanotechnol. 2017 Apr;17(4):2678-681. doi: 10.1166/jnn.2017.13356.
Quantum dots (QDs) are nanocrystalline semiconductors with many unusual optical properties. They exhibit very high fluorescence intensities and possess exceptional stability against photo-bleaching. In this study, we report the preparation of InP QDs-poly(methyl methacrylate) (PMMA) hybrids by fabricating QDs via a thermal decomposition reaction, followed by radical polymerization. The InP QDs were synthesized using indium(III) chloride and tris(dimethylamino)phosphine. Flexible composite films were obtained by radical polymerization using methyl methacrylate (MMA) as the monomer and 2,2′-azobis(2-methylpropionitrile) (AIBN) as a radical initiator. The PL intensity of the QDs was lowered upon composite formation with PMMA. However, the composites exhibited higher thermal stability than pure PMMA.
量子点(QDs)是具有许多异常光学性质的纳米晶半导体。它们表现出非常高的荧光强度,并且具有出色的抗光漂白稳定性。在本研究中,我们报告了通过热分解反应制备InP量子点-聚甲基丙烯酸甲酯(PMMA)杂化物,随后进行自由基聚合。使用氯化铟(III)和三(二甲氨基)膦合成InP量子点。以甲基丙烯酸甲酯(MMA)为单体,2,2'-偶氮二异丁腈(AIBN)为自由基引发剂,通过自由基聚合获得柔性复合膜。与PMMA复合形成后,量子点的PL强度降低。然而,复合材料表现出比纯PMMA更高的热稳定性。