Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting, Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen518055, People's Republic of China.
Institute of Nanoscience and Applications, Southern University of Science and Technology, Shenzhen518055, People's Republic of China.
ACS Appl Mater Interfaces. 2023 Jan 11;15(1):1619-1628. doi: 10.1021/acsami.2c20138. Epub 2022 Dec 27.
InP quantum dots (QDs) are the most competitive in terms of environmentally friendly QDs. However, the synthesis of InP QDs requires breakthroughs in low-cost and safe phosphorus precursors such as tri(dimethylamino)phosphine [(DMA)P]. It is found that even if the oxygen is completely avoided, there are still oxidation state defects at the core/shell interface of InP QDs. Herein, the record-breaking (DMA)P-based red InP QDs were synthesized with the assist of HF processing to eliminate the InPO defect and improve the fluorescence efficiency. The maximum photoluminescence quantum yield was 97.7%, which is the highest of the red InP QDs synthesized by the aminophosphine. The external quantum efficiency and brightness of the QD light-emitting diode device are also improved accordingly from 0.6% and 1276 cd·m to 3.5% and 2355 cd·m, respectively.
磷化铟量子点（QDs）在环保型 QDs 方面最具竞争力。然而，磷化铟 QDs 的合成需要在低成本和安全的磷前体方面取得突破，例如三（二甲氨基）膦[(DMA)P]。研究发现，即使完全避免氧气，磷化铟 QDs 的核/壳界面仍存在氧化态缺陷。在此，通过 HF 处理辅助合成了创纪录的（DMA）P 基红色磷化铟 QDs，以消除 InPO 缺陷并提高荧光效率。最大的光致发光量子产率为 97.7%，这是氨基膦合成的红色磷化铟 QDs 的最高值。QD 发光二极管器件的外量子效率和亮度也相应提高，分别从 0.6%和 1276 cd·m 提高到 3.5%和 2355 cd·m。
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