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花状 InS/CdInS/InO 三元异质结构中的多种载流子转移途径,用于增强光催化制氢性能。

Multiple carrier-transfer pathways in a flower-like InS/CdInS/InO ternary heterostructure for enhanced photocatalytic hydrogen production.

机构信息

Center of Nanomaterials for Renewable Energy, State Key Laboratory of Electrical Insulation and Power Equipment, School of Electrical Engineering, Xi'an Jiaotong University, Xi'an 710049, China.

出版信息

Nanoscale. 2018 Apr 26;10(16):7860-7870. doi: 10.1039/c8nr00170g.

DOI:10.1039/c8nr00170g
PMID:29664490
Abstract

A novel flower-like In2S3/CdIn2S4/In2O3 (ICS) ternary heterostructure (HS) is rationally constructed for the first time by a series of carefully designed procedures. In2O3 nanoflakes are the main constituent units which assemble into a flower-like skeleton structure, and CdIn2S4 nanoparticles are in situ generated on the surface of In2O3 nanoflakes through the transformation of CdS quantum dots (QDs) while In2S3 nanoparticles are in situ produced at the region between CdIn2S4 nanoparticles and In2O3 nanoflakes resulting from a synchronous sulfuration procedure. As expected, the rationally designed ICS ternary HSs display significantly enhanced photocatalytic H2 production, especially ICS5 (sulfurized for 5 h) with the highest H2 evolution rate of 20.04 μmol h-1 (10 mg catalyst is used for photocatalytic reaction), which is 26.7 times and 2.6 times higher than that of pure In2O3 (0.75 μmol h-1) and In2S3/In2O3 binary HS (7.88 μmol h-1), respectively. The enhanced photocatalytic activity can be attributed to the multiple interfaces formed in the ICS HSs, including the CdIn2S4-In2O3 interface, the In2S3-In2O3 interface, and the CdIn2S4-In2O3-In2S3 interface, which construct multiple pathways for the transfer of photogenerated charge carriers, effectively promoting the photocatalytic hydrogen production.

摘要

一种新型的花状 In2S3/CdIn2S4/In2O3(ICS)三元异质结构(HS)是通过一系列精心设计的程序首次合理构建的。In2O3 纳米片是主要的组成单元,它们组装成花状骨架结构,而 CdIn2S4 纳米颗粒则通过 CdS 量子点(QDs)的转化原位生成在 In2O3 纳米片的表面上,而 In2S3 纳米颗粒则原位生成在 CdIn2S4 纳米颗粒和 In2O3 纳米片之间的区域,这是由于同步硫化过程。不出所料,合理设计的 ICS 三元 HSs 表现出显著增强的光催化 H2 产生,特别是 ICS5(硫化 5 小时)具有最高的 H2 演化速率 20.04 μmol h-1(使用 10 mg 催化剂进行光催化反应),分别是纯 In2O3(0.75 μmol h-1)和 In2S3/In2O3 二元 HS(7.88 μmol h-1)的 26.7 倍和 2.6 倍。增强的光催化活性可归因于 ICS HSs 中形成的多个界面,包括 CdIn2S4-In2O3 界面、In2S3-In2O3 界面和 CdIn2S4-In2O3-In2S3 界面,这些界面构建了光生载流子转移的多个途径,有效地促进了光催化制氢。

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