Department of Materials Science and Engineering , North Carolina State University , Raleigh , North Carolina 27606 , United States.
Department of Physics and Materials Science , City University of Hong Kong , Hong Kong SAR , P. R. China.
ACS Appl Mater Interfaces. 2018 May 9;10(18):15920-15925. doi: 10.1021/acsami.8b00592. Epub 2018 Apr 30.
Direct integration of an infrared (IR) photodetector with an organic light-emitting diode (OLED) enables low-cost, pixel-free IR imaging. However, the operation voltage of the resulting IR-to-visible up-conversion is large because of the series device architecture. Here, we report a low-voltage near-IR (NIR)-to-visible up-conversion device using formamidinium lead iodide as a NIR absorber integrated with a phosphorescent OLED. Because of the efficient photocarrier injection from the hybrid perovskite layer to the OLED, we observed a sub-band gap turn-on of the OLED under NIR illumination. The device showed a NIR-to-visible up-conversion efficiency of 3% and a luminance on/off ratio of 10 at only 5 V. Finally, we demonstrate pixel-free NIR imaging using the up-conversion device.
直接将红外（IR）光电探测器与有机发光二极管（OLED）集成，可实现低成本、无像素的 IR 成像。然而，由于串联器件结构，导致转换后的可见光上转换的工作电压较大。在此，我们报告了一种低电压近红外（NIR）到可见光上转换器件，该器件使用碘化甲脒铅作为 NIR 吸收剂，与磷光 OLED 集成。由于高效的光载流子从混合钙钛矿层注入 OLED，我们观察到在 NIR 照射下 OLED 的亚带隙导通。该器件在 5 V 时表现出 3%的 NIR 到可见光的上转换效率和 10 的亮度开/关比。最后，我们使用上转换器件演示了无像素的 NIR 成像。
