Ma Zhibo, Wang Yinan, Shen Qiang, Zhang Han, Guo Xuetao
He Ministry of Education Key Lab of Micro/Nano Systems for Aerospace (Northwestern Polytechnical University), Ministry of Education, Xi'an 710072, China.
Shaan'xi Key Lab of MEMS/NEMS, Northwestern Polytechnical University, Xi'an 710072, China.
Sensors (Basel). 2018 Apr 17;18(4):1240. doi: 10.3390/s18041240.
MEMS fabrication that is based on the silicon-on-glass (SOG) process requires many steps, including patterning, anodic bonding, deep reactive ion etching (DRIE), and chemical mechanical polishing (CMP). The effects of the process parameters of CMP and DRIE are investigated in this study. The process parameters of CMP, such as abrasive size, load pressure, and pH value of SF1 solution are examined to optimize the total thickness variation in the structure and the surface quality. The ratio of etching and passivation cycle time and the process pressure are also adjusted to achieve satisfactory performance during DRIE. The process is optimized to avoid neither the notching nor lag effects on the fabricated silicon structures. For demonstrating the capability of the modified CMP and DRIE processes, a z-axis micro gyroscope is fabricated that is based on the SOG process. Initial test results show that the average surface roughness of silicon is below 1.13 nm and the thickness of the silicon is measured to be 50 μm. All of the structures are well defined without the footing effect by the use of the modified DRIE process. The initial performance test results of the resonant frequency for the drive and sense modes are 4.048 and 4.076 kHz, respectively. The demands for this kind of SOG MEMS device can be fulfilled using the optimized process.
基于玻璃上硅(SOG)工艺的微机电系统(MEMS)制造需要多个步骤,包括光刻、阳极键合、深反应离子刻蚀(DRIE)和化学机械抛光(CMP)。本研究考察了CMP和DRIE工艺参数的影响。研究了CMP的工艺参数,如磨料尺寸、负载压力和SF1溶液的pH值,以优化结构中的总厚度变化和表面质量。在DRIE过程中,还调整了蚀刻和钝化循环时间的比例以及工艺压力,以实现令人满意的性能。对工艺进行了优化,以避免在制造的硅结构上出现刻痕和滞后效应。为了展示改进后的CMP和DRIE工艺的能力,制造了一种基于SOG工艺的z轴微陀螺仪。初步测试结果表明,硅的平均表面粗糙度低于1.13 nm,硅的厚度测量为50μm。通过使用改进的DRIE工艺,所有结构都定义良好,没有出现底部效应。驱动模式和敏感模式的谐振频率的初始性能测试结果分别为4.048 kHz和4.076 kHz。使用优化后的工艺可以满足对这种SOG MEMS器件的要求。