Monsaleve-Calderón K, Gil-Corrales A, Morales A L, Restrepo R L, Mora-Ramos M E, Duque C A
J Nanosci Nanotechnol. 2017 Feb;17(2):1140-148. doi: 10.1166/jnn.2017.12657.
The Raman scattering related with conduction band states in semiconductor pyramidal quantum dots is theoretically investigated. The electron Raman differential cross section and Raman gain coefficient are calculated making use of analytically determined quantum states. The energy spectrum is obtained within the effective mass approximation. The features of the Raman differential cross section are discussed in terms of their dependence on the changes of the quantum dot geometry. The variation of the Raman gain coefficient as a function of the quantum dot size and shape is also analyzed.
对半导体金字塔形量子点中与导带态相关的拉曼散射进行了理论研究。利用解析确定的量子态计算了电子拉曼微分截面和拉曼增益系数。在有效质量近似下获得了能谱。根据拉曼微分截面与量子点几何形状变化的依赖关系，讨论了其特征。还分析了拉曼增益系数随量子点尺寸和形状的变化。
