Park Sang Yong, Park Jeong Eun, Eom Taewoo, Park Jeong Hun, Bweupe Jackson, Lim Donggun
Department of IT Convergence, Korea National University of Transportation, 27469, Republic of Korea.
Department of Electronic Engineering, Korea National University of Transportation, 27469, Republic of Korea.
J Nanosci Nanotechnol. 2018 Sep 1;18(9):6294-6299. doi: 10.1166/jnn.2018.15650.
Cadmium sulfide buffer layer was replaced with zinc sulfide thin film owing to toxicity. ZnS thin films were fabricated using chemical bath deposition. The inhibition of Zn(OH)2 and high uniformity are important factors for the deposition of ZnS. The characteristics of ZnS thin films were analyzed by adding ethylenediamine tetra-acetate acid (EDTA) and hexamethylene tetramine (HMTA). The morphological characteristics of the ZnS buffer layer are closely related to the use of a complexing agent which controls the concentration of Zn2+ ions and Zn(OH)2 in the deposition process. The addition of the complexing agent EDTA accelerated the cluster-cluster method but it exhibited lower uniformity and greater cracking phenomenon. HMTA can be effectively applied to increase the amount of Zn2+ ions forming ZnS. It can be easily found as Zn2 HMTA at high temperatures. The results of the experiment with the addition of HMTA revealed that the surface of the thin film did not change with the increase in the concentration of HMTA, but the thickness of the thin film increased gradually. HMTA promoted the ion-ion method to grow the thin film uniformly, but the speed was slow. Moreover, an experiment by using mixed EDTA and HMTA as the complexing agent was performed. The best ZnS thin film with a transmittance of 83% and a denser surface was prepared using HMTA complexing agent.
由于毒性问题，硫化镉缓冲层被硫化锌薄膜所取代。硫化锌薄膜采用化学浴沉积法制备。抑制氢氧化锌的生成以及高均匀性是硫化锌沉积的重要因素。通过添加乙二胺四乙酸（EDTA）和六亚甲基四胺（HMTA）来分析硫化锌薄膜的特性。硫化锌缓冲层的形态特征与络合剂的使用密切相关，络合剂在沉积过程中控制锌离子和氢氧化锌的浓度。添加络合剂EDTA加速了簇-簇生长方式，但均匀性较低且出现了更严重的开裂现象。HMTA可有效用于增加形成硫化锌的锌离子量。在高温下很容易发现它以Zn2HMTA的形式存在。添加HMTA的实验结果表明，薄膜表面不会随HMTA浓度的增加而变化，但薄膜厚度会逐渐增加。HMTA促进了离子-离子生长方式，使薄膜均匀生长，但速度较慢。此外，还进行了使用混合的EDTA和HMTA作为络合剂的实验。使用HMTA络合剂制备出了透过率为83%且表面更致密的最佳硫化锌薄膜。
