Sigala-Valdez Jesús Octavio, Ramirez-Ezquivel Obed Yamil, Castañeda-Miranda Celina Lizeth, Moreno-García Harumi, García-Rocha Rocio, Escalante-García Ismailia Leilani, Del Rio-De Santiago Antonio
Unidad Académica de Ingeniería Eléctrica / Universidad Autónoma de Zacatecas, Campus Universitario Siglo XXI, Carr, Zacatecas-Guadalajara Km. 6. Col. Ejido "La Escondida." Zacatecas, Zacatecas, 98160, Mexico.
Tecnológico Nacional de México / IT Nuevo León, Centro de Investigación e Innovación Tecnológica, Apodaca, 66629, Mexico.
Heliyon. 2023 Jul 6;9(7):e17971. doi: 10.1016/j.heliyon.2023.e17971. eCollection 2023 Jul.
Using the SILAR method Zinc sulfide coatings were deposited on glass slices. The physical properties and the chemical mechanism throughout the variation in concentration of tri-sodium citrate (TSC) as a chelating agent in the synthesis of thin films were investigated. Results shows that ZnS thin films exhibit an average transmittance of 16% in visible light spectra region and a zinc blende structure. The ZnS films synthesized using TSC as a complexing agent, present a smaller average particle size, an average transmittance of 85%, and an adsorption edge at 300-340 nm. Based on our experimental data and analysis, we conclude that the contribution of the oxychloride species, a subproduct in the chemical deposition, is suggested to be related as an impurity level former in the synthesis of ZnS thin films. TSC as a complexing agent in the SILAR technique is a non-toxic option to reduce the generation of the oxychloride species and synthesize a wide band gap semiconductor. Moreover, the use of complexing agents could be extended to other types of semiconductors deposited by SILAR.
采用连续离子层吸附反应（SILAR）法在玻璃片上沉积硫化锌涂层。研究了在薄膜合成过程中，作为螯合剂的柠檬酸钠（TSC）浓度变化时的物理性质和化学机理。结果表明，硫化锌薄膜在可见光光谱区域的平均透过率为16%，具有闪锌矿结构。以TSC作为络合剂合成的硫化锌薄膜，平均粒径较小，平均透过率为85%，吸附边在300 - 340nm处。基于我们的实验数据和分析，我们得出结论，化学沉积中的副产物氯氧化物物种的贡献被认为与硫化锌薄膜合成中的杂质水平形成有关。TSC作为SILAR技术中的络合剂，是减少氯氧化物物种生成并合成宽带隙半导体的无毒选择。此外，络合剂的使用可以扩展到通过SILAR沉积的其他类型半导体。
