Baines Tom, Papageorgiou Giorgos, Hutter Oliver S, Bowen Leon, Durose Ken, Major Jonathan D
Stephenson Institute for Renewable Energy, Physics Department, University of Liverpool, Liverpool L69 7XF, UK.
Department of Physics, G.J. Russell Microscopy Facility, Durham University, South Road, Durham DH1 3LE, UK.
Nanomaterials (Basel). 2018 Apr 25;8(5):274. doi: 10.3390/nano8050274.
CdTe wires have been fabricated via a catalyst free method using the industrially scalable physical vapor deposition technique close space sublimation. Wire growth was shown to be highly dependent on surface roughness and deposition pressure, with only low roughness surfaces being capable of producing wires. Growth of wires is highly (111) oriented and is inferred to occur via a vapor-solid-solid growth mechanism, wherein a CdTe seed particle acts to template the growth. Such seed particles are visible as wire caps and have been characterized via energy dispersive X-ray analysis to establish they are single phase CdTe, hence validating the self-catalysation route. Cathodoluminescence analysis demonstrates that CdTe wires exhibited a much lower level of recombination when compared to a planar CdTe film, which is highly beneficial for semiconductor applications.
碲化镉(CdTe)线已通过无催化剂方法制造,该方法使用具有工业可扩展性的物理气相沉积技术——近空间升华法。结果表明,线的生长高度依赖于表面粗糙度和沉积压力,只有低粗糙度表面才能产生线。线的生长高度沿(111)方向取向,据推测是通过气-固-固生长机制发生的,其中碲化镉籽晶颗粒起到生长模板的作用。这种籽晶颗粒可见于线帽处,并已通过能量色散X射线分析进行表征,以确定它们是单相碲化镉,从而验证了自催化生长途径。阴极发光分析表明,与平面碲化镉薄膜相比,碲化镉线的复合水平要低得多,这对半导体应用非常有利。