Division of IT Convergence Engineering, Pohang University of Science and Technology, Pohang, Republic of Korea.
Nanotechnology. 2011 Oct 28;22(43):435204. doi: 10.1088/0957-4484/22/43/435204.
We report growth and characterization of CdTe wires 30–400 nm in diameter by the vapor–liquid–solid technique. Individual nanowires were placed on a movable piezotube, which allowed three-dimensional motion toward a scanning tunneling microscope (STM). A bias was applied to the STM tip in contact with the nanowire, and the morphological changes due to Joule heating were observed in situ using a transmission electron microscope (TEM) in real time. For thick CdTe wires (d > ~150 nm), the process results in the growth of superfine nanowires (SFNWs) of 2–4 nm diameter on the surface of the wire. Smaller diameter nanowires, in contrast, disintegrate under the applied bias before the complete evolution of SFNWs on the surface.
我们通过汽-液-固技术报告了直径为 30-400nm 的 CdTe 线的生长和特性。将个别纳米线放置在可移动的压电管上,这允许它们朝着扫描隧道显微镜(STM)进行三维运动。在与纳米线接触的 STM 尖端施加偏压,并使用透射电子显微镜(TEM)实时原位观察由于焦耳加热引起的形态变化。对于较厚的 CdTe 线(d>~150nm),该过程导致在表面上生长出直径为 2-4nm 的超细纳米线(SFNWs)。相比之下,直径较小的纳米线在表面上完全演化出 SFNWs 之前,在施加的偏压下会分解。