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NMDA 受体亚基在突触可塑性诱导以及学习和记忆获得后发生变化。

NMDA Receptor Subunits Change after Synaptic Plasticity Induction and Learning and Memory Acquisition.

机构信息

Instituto de Biología Celular y Neurociencia "Prof. E. De Robertis", UBA-CONICET, School of Medicine, University of Buenos Aires, 2155 Paraguay St., 1121 CABA, Argentina.

出版信息

Neural Plast. 2018 Mar 7;2018:5093048. doi: 10.1155/2018/5093048. eCollection 2018.

Abstract

NMDA ionotropic glutamate receptors (NMDARs) are crucial in activity-dependent synaptic changes and in learning and memory. NMDARs are composed of two GluN1 essential subunits and two regulatory subunits which define their pharmacological and physiological profile. In CNS structures involved in cognitive functions as the hippocampus and prefrontal cortex, GluN2A and GluN2B are major regulatory subunits; their expression is dynamic and tightly regulated, but little is known about specific changes after plasticity induction or memory acquisition. Data strongly suggest that following appropriate stimulation, there is a rapid increase in surface GluN2A-NMDAR at the postsynapses, attributed to lateral receptor mobilization from adjacent locations. Whenever synaptic plasticity is induced or memory is consolidated, more GluN2A-NMDARs are assembled likely using GluN2A from a local translation and GluN1 from local ER. Later on, NMDARs are mobilized from other pools, and there are de novo syntheses at the neuron soma. Changes in GluN1 or NMDAR levels induced by synaptic plasticity and by spatial memory formation seem to occur in different waves of NMDAR transport/expression/degradation, with a net increase at the postsynaptic side and a rise in expression at both the spine and neuronal soma. This review aims to put together that information and the proposed hypotheses.

摘要

N-甲基-D-天冬氨酸型谷氨酸受体(NMDAR)在依赖活动的突触变化以及学习和记忆中起着至关重要的作用。NMDAR 由两个必需的 GluN1 亚基和两个调节亚基组成,它们决定了其药理学和生理学特征。在涉及认知功能的中枢神经系统结构中,如海马体和前额叶皮层,GluN2A 和 GluN2B 是主要的调节亚基;它们的表达是动态的,受到严格调控,但对于可塑性诱导或记忆获得后的特定变化知之甚少。有数据强烈表明,在适当的刺激后,突触后膜表面的 GluN2A-NMDAR 会迅速增加,这归因于来自相邻位置的侧向受体迁移。每当发生突触可塑性或记忆巩固时,可能会使用来自局部翻译的 GluN2A 和来自局部内质网的 GluN1 来组装更多的 GluN2A-NMDAR。之后,NMDAR 会从其他池迁移,神经元胞体也会进行新的合成。突触可塑性和空间记忆形成引起的 GluN1 或 NMDAR 水平变化似乎发生在 NMDAR 运输/表达/降解的不同波中,突触后侧净增加,棘突和神经元胞体表达增加。本综述旨在综合这些信息和提出的假说。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/296b/5863338/209f6f3301c0/NP2018-5093048.001.jpg

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