King Abdullah University of Science and Technology (KAUST) , Advanced Semiconductor Laboratory , Thuwal , Saudi Arabia 23955.
Texas Center for Superconductivity at UH (TcSUH) and Advanced Manufacturing Institute (AMI) , University of Houston , Houston , Texas 77204 , United States.
ACS Appl Mater Interfaces. 2018 Jun 13;10(23):20085-20094. doi: 10.1021/acsami.8b02899. Epub 2018 May 31.
The effect of controlling the c-axis alignment (mosaicity) to the cross-plane thermal transport in textured polycrystalline aluminum nitride (AlN) thin films is experimentally and theoretically investigated. We show that by controlling the sputtering conditions we are able to deposit AlN thin films with varying c-axis grain tilt (mosaicity) from 10° to 0°. Microstructural characterization shows that the films are nearly identical in thickness and grain size, and the difference in mosaicity alters the grain interface quality. This has a significant effect to thermal transport where a thermal conductivity of 4.22 vs 8.09 W/mK are measured for samples with tilt angles of 10° versus 0° respectively. The modified Callaway model was used to fit the theoretical curves to the experimental results using various phonon scattering mechanisms at the grain interface. It was found that using a non-gray model gives an overview of the phonon scattering at the grain boundaries, whereas treating the grain boundary as an array of dislocation lines with varying angle relative to the heat flow, best describes the mechanism of the thermal transport. Lastly, our results show that controlling the quality of the grain interface provides a tuning knob to control thermal transport in polycrystalline materials.
控制 c 轴取向(镶嵌度)对织构多晶氮化铝 (AlN) 薄膜面内热输运的影响进行了实验和理论研究。结果表明,通过控制溅射条件,我们能够沉积出具有不同 c 轴晶粒倾斜(镶嵌度)的 AlN 薄膜,其范围从 10°到 0°。微观结构表征表明,这些薄膜在厚度和晶粒尺寸上几乎相同,而镶嵌度的差异改变了晶粒界面的质量。这对面内热输运有显著的影响,其中倾斜角为 10°的样品的热导率为 4.22 W/mK,而倾斜角为 0°的样品的热导率为 8.09 W/mK。采用修正的 Callaway 模型,使用各种声子散射机制在晶粒界面处对理论曲线进行拟合,以符合实验结果。结果发现,使用非灰模型可以全面描述晶粒边界处的声子散射,而将晶粒边界视为具有不同角度的位错线阵列,与热流方向相对,最能描述热输运的机制。最后,我们的结果表明,控制晶粒界面的质量为控制多晶材料的热输运提供了一个调节旋钮。