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三维电荷和二维声子输运导致 n 型 SnSe 晶体的面外电导率高。

3D charge and 2D phonon transports leading to high out-of-plane in n-type SnSe crystals.

机构信息

School of Materials Science and Engineering, Beihang University, Beijing 100191, China.

Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China.

出版信息

Science. 2018 May 18;360(6390):778-783. doi: 10.1126/science.aaq1479.

Abstract

Thermoelectric technology enables the harvest of waste heat and its direct conversion into electricity. The conversion efficiency is determined by the materials figure of merit Here we show a maximum of ~2.8 ± 0.5 at 773 kelvin in n-type tin selenide (SnSe) crystals out of plane. The thermal conductivity in layered SnSe crystals is the lowest in the out-of-plane direction [two-dimensional (2D) phonon transport]. We doped SnSe with bromine to make n-type SnSe crystals with the overlapping interlayer charge density (3D charge transport). A continuous phase transition increases the symmetry and diverges two converged conduction bands. These two factors improve carrier mobility, while preserving a large Seebeck coefficient. Our findings can be applied in 2D layered materials and provide a new strategy to enhance out-of-plane electrical transport properties without degrading thermal properties.

摘要

热电技术可利用废热并将其直接转化为电能。转换效率由材料的品质因数决定。在这里,我们在面外方向展示了 n 型硒化锡(SnSe)晶体的最大值约为~2.8±0.5,在 773 开尔文下。层状 SnSe 晶体的热导率在面外方向最低[二维(2D)声子输运]。我们用溴掺杂 SnSe 以制造具有重叠层间电荷密度的 n 型 SnSe 晶体(3D 电荷输运)。连续相变增加了对称性并使两个收敛的传导带发散。这两个因素提高了载流子迁移率,同时保持了较大的塞贝克系数。我们的发现可应用于 2D 层状材料,并提供了一种在不降低热性能的情况下增强面外电输运性能的新策略。

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