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压缩诱导的氮化硼层修饰:一种导电二维氮化硼化合物。

Compression-Induced Modification of Boron Nitride Layers: A Conductive Two-Dimensional BN Compound.

作者信息

Barboza Ana P M, Matos Matheus J S, Chacham Helio, Batista Ronaldo J C, de Oliveira Alan B, Mazzoni Mario S C, Neves Bernardo R A

机构信息

Departamento de Física , Universidade Federal de Ouro Preto , 35400-000 , Ouro Preto , MG , Brazil.

Departamento de Física , Universidade Federal de Minas Gerais , CP 702, 31270-901 , Belo Horizonte , MG , Brazil.

出版信息

ACS Nano. 2018 Jun 26;12(6):5866-5872. doi: 10.1021/acsnano.8b01911. Epub 2018 May 25.

Abstract

The ability to create materials with improved properties upon transformation processes applied to conventional materials is the keystone of materials science. Here, hexagonal boron nitride (h-BN), a large-band-gap insulator, is transformed into a conductive two-dimensional (2D) material- bonitrol-that is stable at ambient conditions. The process, which requires compression of at least two h-BN layers and hydroxyl ions, is characterized via scanning probe microscopy experiments and ab initio calculations. This material and its creation mechanism represent an additional strategy for the transformation of known 2D materials into artificial advanced materials with exceptional properties.

摘要

通过对传统材料施加转变过程来制造具有改进性能的材料的能力是材料科学的基石。在此,六方氮化硼(h-BN),一种大带隙绝缘体,被转变为一种在环境条件下稳定的导电二维(2D)材料——硼控电阻(bonitrol)。该过程需要压缩至少两层h-BN并存在氢氧根离子,通过扫描探针显微镜实验和从头算计算对其进行了表征。这种材料及其制备机制代表了将已知二维材料转变为具有卓越性能的人工先进材料的另一种策略。

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