Olympus Corporation, Tokyo 163-0914, Japan.
Sensors (Basel). 2018 May 24;18(6):1688. doi: 10.3390/s18061688.
We developed a multiband imaging CMOS image sensor (CIS) with a multi-storied photodiode structure, which comprises two photodiode (PD) arrays that capture two different images, visible red, green, and blue (RGB) and near infrared (NIR) images at the same time. The sensor enables us to capture a wide variety of multiband images which is not limited to conventional visible RGB images taken with a Bayer filter or to invisible NIR images. Its wiring layers between two PD arrays can have an optically optimized effect by modifying its material and thickness on the bottom PD array. The incident light angle on the bottom PD depends on the thickness and structure of the wiring and bonding layer, and the structure can act as an optical filter. Its wide-range sensitivity and optimized optical filtering structure enable us to create the images of specific bands of light waves in addition to visible RGB images without designated pixels for IR among same pixel arrays without additional optical components. Our sensor will push the envelope of capturing a wide variety of multiband images.
我们开发了一种具有多层光电二极管结构的多波段成像 CMOS 图像传感器 (CIS),它由两个光电二极管 (PD) 阵列组成,可以同时捕获两种不同的图像,即可见的红、绿、蓝 (RGB) 和近红外 (NIR) 图像。该传感器使我们能够捕获各种各样的多波段图像,不仅限于使用拜耳滤波器拍摄的传统可见 RGB 图像,也不限于不可见的 NIR 图像。其两个 PD 阵列之间的布线层可以通过修改底部 PD 阵列的材料和厚度来产生光学优化效果。底部 PD 的入射光角度取决于布线和键合层的厚度和结构,并且该结构可以充当光学滤波器。其宽范围的灵敏度和优化的光学滤波结构使我们能够在没有指定像素的情况下,在同一像素阵列中创建特定波段的光波图像,而无需额外的光学元件。我们的传感器将在捕获各种多波段图像方面取得突破。