Graduate School of Engineering, Tohoku University, 6-6-11-811, Aza-Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579, Japan.
Sensors (Basel). 2019 Dec 18;20(1):13. doi: 10.3390/s20010013.
This paper presents a complementary metal-oxide-semiconductor (CMOS) image sensor (CIS) capable of capturing UV-selective and visible light images simultaneously by a single exposure and without employing optical filters, suitable for applications that require simultaneous UV and visible light imaging, or UV imaging in variable light environment. The developed CIS is composed by high and low UV sensitivity pixel types, arranged alternately in a checker pattern. Both pixel types were designed to have matching sensitivities for non-UV light. The UV-selective image is captured by extracting the differential spectral response between adjacent pixels, while the visible light image is captured simultaneously by the low UV sensitivity pixels. Also, to achieve high conversion gain and wide dynamic range simultaneously, the lateral overflow integration capacitor (LOFIC) technology was introduced in both pixel types. The developed CIS has a pixel pitch of 5.6 µm and exhibits 172 µV/e conversion gain, 131 ke full well capacity (FWC), and 92.3 dB dynamic range. The spectral sensitivity ranges of the high and low UV sensitivity pixels are of 200-750 nm and 390-750 nm, respectively. The resulting sensitivity range after the differential spectral response extraction is of 200-480 nm. This paper presents details regarding the CIS pixels structures, doping profiles, device simulations, and the measurement results for photoelectric response and spectral sensitivity for both pixel types. Also, sample images of UV-selective and visible spectral imaging using the developed CIS are presented.
本文提出了一种互补金属氧化物半导体(CMOS)图像传感器(CIS),通过单次曝光和不使用光学滤波器,能够同时捕获紫外选择性和可见光图像,适用于需要同时进行紫外和可见光成像或在可变光照环境下进行紫外成像的应用。所开发的 CIS 由高和低紫外灵敏度像素类型组成,以棋盘格图案交替排列。这两种像素类型均设计为对非紫外光具有匹配的灵敏度。通过提取相邻像素之间的差分光谱响应来捕获紫外选择性图像,同时通过低紫外灵敏度像素同时捕获可见光图像。此外,为了同时实现高转换增益和宽动态范围,在两种像素类型中都引入了横向溢流积分电容器(LOFIC)技术。所开发的 CIS 的像素间距为 5.6 µm,具有 172 µV/e 的转换增益、131 ke 的全阱容量(FWC)和 92.3 dB 的动态范围。高和低紫外灵敏度像素的光谱灵敏度范围分别为 200-750nm 和 390-750nm。经过差分光谱响应提取后的灵敏度范围为 200-480nm。本文介绍了 CIS 像素结构、掺杂轮廓、器件模拟以及两种像素类型的光电响应和光谱灵敏度的测量结果。还展示了使用所开发的 CIS 进行紫外选择性和可见光谱成像的示例图像。