Department of Physics, Boston College, Chestnut Hill, MA 02467.
Department of Physics, University of California, Berkeley, CA 94720.
Proc Natl Acad Sci U S A. 2018 Jul 3;115(27):6986-6990. doi: 10.1073/pnas.1718931115. Epub 2018 Jun 18.
A charge density wave (CDW) is one of the fundamental instabilities of the Fermi surface occurring in a wide range of quantum materials. In dimensions higher than one, where Fermi surface nesting can play only a limited role, the selection of the particular wavevector and geometry of an emerging CDW should in principle be susceptible to controllable manipulation. In this work, we implement a simple method for straining materials compatible with low-temperature scanning tunneling microscopy/spectroscopy (STM/S), and use it to strain-engineer CDWs in -NbSe Our STM/S measurements, combined with theory, reveal how small strain-induced changes in the electronic band structure and phonon dispersion lead to dramatic changes in the CDW ordering wavevector and geometry. Our work unveils the microscopic mechanism of a CDW formation in this system, and can serve as a general tool compatible with a range of spectroscopic techniques to engineer electronic states in any material where local strain or lattice symmetry breaking plays a role.
电荷密度波 (CDW) 是费米面的基本不稳定性之一,存在于广泛的量子材料中。在高于一维的维度中,费米面嵌套只能发挥有限的作用,因此新兴 CDW 的特定波矢和几何形状的选择原则上应该易于进行可控操作。在这项工作中,我们实现了一种简单的应变方法,该方法与低温扫描隧道显微镜/光谱学 (STM/S) 兼容,并将其用于应变工程化-NbSe 中的 CDW。我们的 STM/S 测量结果与理论相结合,揭示了电子能带结构和声子色散中微小应变诱导的变化如何导致 CDW 有序波矢和几何形状的剧烈变化。我们的工作揭示了该系统中 CDW 形成的微观机制,并且可以作为一种通用工具,与一系列光谱技术兼容,以工程化任何局部应变或晶格对称性破坏起作用的材料中的电子态。