School of Chemical Sciences, National Institute of Science Education and Research Bhubaneswar, Jatni, Khurda - 752050, Odisha, India.
Dalton Trans. 2018 Jul 10;47(27):8841-8864. doi: 10.1039/c8dt01883a.
Molecular nano magnets such as single-molecule magnets (SMMs) are a class of coordination complexes with numerous potential applications such as information storage devices, Q-bits in quantum computing and spintronics materials. One of the greatest challenges in taking these molecules to end-user applications lies in devising strategies to control and predict their magnetic properties. In this regard, lanthanide-based compounds are very attractive as they possess appealing magnetic properties such as very high barriers for magnetization reversal, very large blocking temperatures etc. Controlling the microscopic energy levels of lanthanide-based single-ion magnets (SIMs) is a challenging task and to obtain molecules having very large blocking temperatures, it is desirable to enhance the ground state-excited state gap between the mJ levels and also to quench the quantum tunnelling of magnetization that often circumvents the barrier height. One of the strategies that has been developed by us and others in this area is to employ a diamagnetic transition metal ion to achieve this goal. Over the years several diamagnetic ions such as ZnII, NiII (square planar), AlIII and CoIII have been successfully employed to obtain lanthanide-based SMMs with interesting properties. In this perspective, we discuss how incorporation of diamagnetic ion(s) in the cluster aggregation enhances the barrier height for magnetization reversal and hence improves the magnetic properties. We also discuss theoretical studies on such systems based on ab initio calculations performed using CASSCF level of theory. Such studies are helpful in affording an understanding of the role and limitation of the diamagnetic ions in enhancing the barrier height for magnetization reversal of molecular nanomagnets.
分子纳米磁体,如单分子磁体(SMMs),是一类具有众多潜在应用的配位化合物,例如信息存储设备、量子计算中的 Q 位和自旋电子材料。将这些分子应用于最终用户应用的最大挑战之一在于设计控制和预测其磁性能的策略。在这方面,基于镧系元素的化合物非常有吸引力,因为它们具有吸引人的磁性能,例如非常高的磁化反转势垒、非常大的阻挡温度等。控制基于镧系元素的单离子磁体(SIMs)的微观能级是一项具有挑战性的任务,为了获得具有非常大阻挡温度的分子,理想情况下需要增强 mJ 能级之间的基态-激发态能隙,并抑制磁量子隧道效应,这种效应常常绕过势垒高度。我们和该领域的其他人开发的策略之一是使用抗磁性过渡金属离子来实现这一目标。多年来,已经成功地使用了几种抗磁性离子,如 ZnII、NiII(正方形平面)、AlIII 和 CoIII,以获得具有有趣性质的基于镧系元素的 SMMs。在这个角度下,我们讨论了在簇聚集中掺入抗磁性离子如何提高磁化反转的势垒高度,从而改善磁性能。我们还讨论了基于从头算计算的此类系统的理论研究,这些计算使用 CASSCF 理论水平进行。这些研究有助于理解抗磁性离子在增强分子纳米磁体的磁化反转势垒高度方面的作用和局限性。