Zheng Dingshan, Fang Hehai, Long Mingsheng, Wu Feng, Wang Peng, Gong Fan, Wu Xing, Ho Johnny C, Liao Lei, Hu Weida
State Key Laboratory of Infrared Physics , Shanghai Institute of Technical Physics, Chinese Academy of Sciences , Shanghai 200083 , China.
School of Physics and Optoelectronic Engineering , Yangtze University , Jingzhou 434023 , China.
ACS Nano. 2018 Jul 24;12(7):7239-7245. doi: 10.1021/acsnano.8b03291. Epub 2018 Jun 28.
Because of the distinct electronic properties and strong interaction with light, quasi-one-dimensional nanowires (NWs) with semiconducting property have been demonstrated with tremendous potential for various technological applications, especially electronics and optoelectronics. However, until now, most of the state-of-the-art NW photodetectors are predominantly based on the n-type NW channel. Here, we successfully synthesized p-type SnSe and SnS NWs via the chemical vapor deposition method and fabricated high-performance single SnSe and SnS NW photodetectors. Importantly, these two NW devices exhibit an impressive photodetection performance with a high photoconductive gain of 1.5 × 10 (2.8 × 10), good responsivity of 1.0 × 10 A W (1.6 × 10 A W), and excellent detectivity of 3.3 × 10 Jones (2.4 × 10 Jones) under near-infrared illumination at a bias of 3 V for the SnSe NW (SnS NW) channel. The rise and fall times can be as efficient as 460 and 520 μs (1.2 and 15.1 ms), respectively, for the SnSe NW (SnS NW) device. Moreover, the spatially resolved photocurrent mapping of the devices further reveals the bias-dependent photocurrent generation. All these results evidently demonstrate that the p-type SnSe and SnS NWs have great potential to be applied in next-generation high-performance optoelectronic devices.
由于具有独特的电子特性以及与光的强相互作用，具有半导体性质的准一维纳米线（NWs）在各种技术应用，特别是电子学和光电子学领域展现出了巨大的潜力。然而，到目前为止，大多数先进的NW光探测器主要基于n型NW通道。在此，我们通过化学气相沉积法成功合成了p型SnSe和SnS纳米线，并制备了高性能的单个SnSe和SnS NW光探测器。重要的是，这两种NW器件在3 V偏压下，对于SnSe NW（SnS NW）通道在近红外光照下表现出令人印象深刻的光探测性能，具有1.5×10（2.8×10）的高光导增益、1.0×10 A/W（1.6×10 A/W）的良好响应度以及3.3×10琼斯（2.4×10琼斯）的优异探测率。对于SnSe NW（SnS NW）器件，上升和下降时间分别可达460和520 μs（1.2和15.1 ms）。此外，器件的空间分辨光电流映射进一步揭示了光电流产生与偏压的关系。所有这些结果清楚地表明，p型SnSe和SnS纳米线在下一代高性能光电器件中具有巨大的应用潜力。
