Ma Zongpeng, Chai Shouning, Feng Qingliang, Li Liang, Li Xiaobo, Huang Lingli, Liu Dongyan, Sun Jie, Jiang Ruibin, Zhai Tianyou, Xu Hua
Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, P. R. China.
Chemistry and Chemical Engineering, Xi'an University of Architecture and Technology, Xi'an, 710055, P. R. China.
Small. 2019 Mar;15(9):e1805307. doi: 10.1002/smll.201805307. Epub 2019 Feb 1.
Low-dimensional semiconductors have attracted considerable attention due to their unique structures and remarkable properties, which makes them promising materials for a wide range of applications related to electronics and optoelectronics. Herein, the preparation of 1D Sb Se nanowires (NWs) with high crystal quality via chemical vapor deposition growth is reported. The obtained Sb Se NWs have triangular prism morphology with aspect ratio range from 2 to 200, and three primary lattice orientations can be achieved on the sixfold symmetry mica substrate. Angle-resolved polarized Raman spectroscopy measurement reveals strong anisotropic properties of the Sb Se NWs, which is also developed to identify its crystal orientation. Furthermore, photodetectors based on Sb Se NW exhibit a wide spectral photoresponse range from visible to NIR (400-900 nm). Owing to the high crystallinity of Sb Se NW, the photodetector acquires a photocurrent on/off ratio of about 405, a responsivity of 5100 mA W , and fast rise and fall times of about 32 and 5 ms, respectively. Additionally, owing to the anisotropic structure of Sb Se NW, the device exhibits polarization-dependent photoresponse. The high crystallinity and superior anisotropy of Sb Se NW, combined with controllable preparation endows it with great potential for constructing multifunctional optoelectronic devices.
低维半导体因其独特的结构和卓越的性能而备受关注，这使其成为电子学和光电子学等广泛应用领域中极具潜力的材料。在此，报道了通过化学气相沉积生长法制备具有高质量晶体的一维SbSe纳米线（NWs）。所获得的SbSe NWs具有三角棱柱形态，纵横比范围为2至200，并且在六重对称云母衬底上可实现三种主要晶格取向。角分辨偏振拉曼光谱测量揭示了SbSe NWs具有很强的各向异性特性，该特性也被用于识别其晶体取向。此外，基于SbSe NW的光电探测器在可见光到近红外（400 - 900 nm）范围内表现出宽光谱光响应。由于SbSe NW具有高结晶度，该光电探测器获得了约405的光电流开/关比、5100 mA/W的响应度以及分别约为32和5 ms的快速上升和下降时间。此外，由于SbSe NW的各向异性结构，该器件表现出偏振依赖的光响应。SbSe NW的高结晶度和优异的各向异性，以及可控制备，使其在构建多功能光电器件方面具有巨大潜力。
